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ISP25DP06LMS
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Infineon Technologies MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ISP25DP06LMS
Infineon Technologies · MOSFETs · SOT-223
ISP25DP06LMS from Infineon Technologies, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET; the gate-source voltage is rated from -20 V to 20 V, and RDS(on) is specified at VGS = -4.5 V and -10 V. |
| 2 | Drain | passive | Drain terminal of the P-channel MOSFET; continuous drain current is rated up to -1.9 A at VGS = -10 V and TA = 25 °C, with VDS rated at -60 V. |
| 3 | Source | passive | Source terminal of the P-channel MOSFET; the datasheet gives no separate electrical limit for this pin and identifies it only in the pinout figure. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | -1.9 | A | VGS=-10V, TA=25°C, RTHJA=70°C/W | 3 | ||
| Continuous drain current | ID | -1.2 | A | VGS=-10V, TA=100°C, RTHJA=70°C/W | 3 | ||
| Continuous drain current | ID | -1.7 | A | VGS=-4.5V, TA=25°C, RTHJA=70°C/W | 3 | ||
| Continuous drain current | ID | -1.1 | A | VGS=-4.5V, TA=100°C, RTHJA=70°C/W | 3 | ||
| Pulsed drain current | ID,pulse | -7.6 | A | TA=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 257 | mJ | ID=-1.9A, RGS=25Ω | 3 | ||
| Gate source voltage | VGS | -20 | 20 | V | 3 | ||
| Power dissipation | Ptot | 5 | W | TS=25°C | 3 | ||
| Power dissipation | Ptot | 1.8 | W | TA=25°C, RTHJA=70°C/W | 3 | ||
| Operating and storage temperature | Tj,Tstg | -55 | 150 | °C | IEC climatic category; DIN IEC 68-1: 55/150/56 | 3 | |
| Thermal resistance, junction - soldering point (bottom) | RthJS | 25 | °C/W | 3 | |||
| Thermal resistance, junction - ambient | RthJA | 70 | °C/W | Device on PCB, 6 cm² cooling area | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | -60 | V | VGS=0V, ID=-250µA | 4 | ||
| Gate threshold voltage | VGS(th) | -1 | -1.5 | -2 | V | VDS=VGS, ID=-270µA | 4 |
| Zero gate voltage drain current | IDSS | -0.1 | 1 | µA | VDS=-60V, VGS=0V, Tj=25°C | 4 | |
| Zero gate voltage drain current | IDSS | -10 | -100 | µA | VDS=-60V, VGS=0V, Tj=125°C | 4 | |
| Gate-source leakage current | IGSS | -10 | -100 | nA | VGS=-20V, VDS=0V | 4 | |
| Drain-source on-state resistance | RDS(on) | 177 | 250 | mΩ | VGS=-10V, ID=-1.9A | 4 | |
| Drain-source on-state resistance | RDS(on) | 211 | 310 | mΩ | VGS=-4.5V, ID=-1.7A | 4 | |
| Diode continuous forward current | IS | -1.5 | A | TA=25°C | 5 | ||
| Diode pulse current | IS,pulse | -6 | A | TA=25°C | 5 | ||
| Diode forward voltage | VSD | -0.8 | -1.2 | V | VGS=0V, IF=-1.5A, Tj=25°C | 5 |
CAD (KiCad official)
- Symbol:
ISP25DP06LMS - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
isp25dp06lms-etched.step/isp25dp06lms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);isp25dp06lms.step/isp25dp06lms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (11 pp, sha256
2ed52d76472bfb1d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ISP25DP06LMS
**Infineon Technologies** · MOSFETs · SOT-223
ISP25DP06LMS from Infineon Technologies, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET; the gate-source voltage is rated from -20 V to 20 V, and RDS(on) is specified at VGS = -4.5 V and -10 V. |
| 2 | Drain | passive | Drain terminal of the P-channel MOSFET; continuous drain current is rated up to -1.9 A at VGS = -10 V and TA = 25 °C, with VDS rated at -60 V. |
| 3 | Source | passive | Source terminal of the P-channel MOSFET; the datasheet gives no separate electrical limit for this pin and identifies it only in the pinout figure. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | | | -1.9 | A | VGS=-10V, TA=25°C, RTHJA=70°C/W | 3 |
| Continuous drain current | ID | | | -1.2 | A | VGS=-10V, TA=100°C, RTHJA=70°C/W | 3 |
| Continuous drain current | ID | | | -1.7 | A | VGS=-4.5V, TA=25°C, RTHJA=70°C/W | 3 |
| Continuous drain current | ID | | | -1.1 | A | VGS=-4.5V, TA=100°C, RTHJA=70°C/W | 3 |
| Pulsed drain current | ID,pulse | | | -7.6 | A | TA=25°C | 3 |
| Avalanche energy, single pulse | EAS | | | 257 | mJ | ID=-1.9A, RGS=25Ω | 3 |
| Gate source voltage | VGS | -20 | | 20 | V | | 3 |
| Power dissipation | Ptot | | | 5 | W | TS=25°C | 3 |
| Power dissipation | Ptot | | | 1.8 | W | TA=25°C, RTHJA=70°C/W | 3 |
| Operating and storage temperature | Tj,Tstg | -55 | | 150 | °C | IEC climatic category; DIN IEC 68-1: 55/150/56 | 3 |
| Thermal resistance, junction - soldering point (bottom) | RthJS | | | 25 | °C/W | | 3 |
| Thermal resistance, junction - ambient | RthJA | | | 70 | °C/W | Device on PCB, 6 cm² cooling area | 3 |
| Drain-source breakdown voltage | V(BR)DSS | -60 | | | V | VGS=0V, ID=-250µA | 4 |
| Gate threshold voltage | VGS(th) | -1 | -1.5 | -2 | V | VDS=VGS, ID=-270µA | 4 |
| Zero gate voltage drain current | IDSS | | -0.1 | 1 | µA | VDS=-60V, VGS=0V, Tj=25°C | 4 |
| Zero gate voltage drain current | IDSS | | -10 | -100 | µA | VDS=-60V, VGS=0V, Tj=125°C | 4 |
| Gate-source leakage current | IGSS | | -10 | -100 | nA | VGS=-20V, VDS=0V | 4 |
| Drain-source on-state resistance | RDS(on) | | 177 | 250 | mΩ | VGS=-10V, ID=-1.9A | 4 |
| Drain-source on-state resistance | RDS(on) | | 211 | 310 | mΩ | VGS=-4.5V, ID=-1.7A | 4 |
| Diode continuous forward current | IS | | | -1.5 | A | TA=25°C | 5 |
| Diode pulse current | IS,pulse | | | -6 | A | TA=25°C | 5 |
| Diode forward voltage | VSD | | -0.8 | -1.2 | V | VGS=0V, IF=-1.5A, Tj=25°C | 5 |
## CAD (KiCad official)
- Symbol: `ISP25DP06LMS`
- Footprint: `Package_TO_SOT_SMD:SOT-223-3_TabPin2`
- 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files: `isp25dp06lms-etched.step` / `isp25dp06lms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `isp25dp06lms.step` / `isp25dp06lms.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885339364593664) (11 pp, sha256 `2ed52d76472bfb1d`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/isp25dp06lms-datasheet.pdf)