ISP20EP10LMXTSA1

Infineon Technologies · MOSFETs · SOT-223-4

ISP20EP10LMXTSA1 from Infineon Technologies, in a SOT-223-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Gate	input	Gate of the P-channel enhancement-mode MOSFET, with a threshold of -1.0 V min to -2.0 V max and an absolute maximum VGS of ±20 V.
2	Drain	passive	Drain of the P-channel MOSFET, rated for VDS of -100 V and continuous drain current of -0.99 A at TC=25 °C, and connected to tab pin 4.
3	Source	passive	Source of the P-channel MOSFET, which carries the body-diode forward current of up to -0.99 A continuous at TC=25 °C.
4	Drain	passive	Drain tab of the PG-SOT223-4 package, shown as Drain Pin 2, 4 and common with pin 2, rated for VDS of -100 V.

Key specifications

Parameter	Value
Manufacturer	Infineon Technologies
Package	SOT-223-4
Category	Triode/MOS Tube/Transistor
Pins	4

CAD (KiCad official)

Symbol: ISP20EP10LMXTSA1
Footprint: Package_TO_SOT_SMD:SOT-223
3D model: SOT-223-4 (KiCad packages3D, STEP)
3D model files: isp20ep10lmxtsa1-etched.step / isp20ep10lmxtsa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); isp20ep10lmxtsa1.step / isp20ep10lmxtsa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Infineon Technologies datasheet (11 pp, sha256 107ca4715f9ae089, retrieved 2026-10-28, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

# ISP20EP10LMXTSA1

**Infineon Technologies** · MOSFETs · SOT-223-4

ISP20EP10LMXTSA1 from Infineon Technologies, in a SOT-223-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the P-channel enhancement-mode MOSFET, with a threshold of -1.0 V min to -2.0 V max and an absolute maximum VGS of ±20 V. |
| 2 | Drain | passive | Drain of the P-channel MOSFET, rated for VDS of -100 V and continuous drain current of -0.99 A at TC=25 °C, and connected to tab pin 4. |
| 3 | Source | passive | Source of the P-channel MOSFET, which carries the body-diode forward current of up to -0.99 A continuous at TC=25 °C. |
| 4 | Drain | passive | Drain tab of the PG-SOT223-4 package, shown as Drain Pin 2, 4 and common with pin 2, rated for VDS of -100 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-223-4 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 4 |

## CAD (KiCad official)

- Symbol: `ISP20EP10LMXTSA1`
- Footprint: `Package_TO_SOT_SMD:SOT-223`
- 3D model: SOT-223-4 (KiCad packages3D, STEP)
- 3D model files: `isp20ep10lmxtsa1-etched.step` / `isp20ep10lmxtsa1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `isp20ep10lmxtsa1.step` / `isp20ep10lmxtsa1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](docs/isp20ep10lmxtsa1-datasheet.pdf) (11 pp, sha256 `107ca4715f9ae089`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/isp20ep10lmxtsa1-datasheet.pdf)