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ISO6520REUR

Texas Instruments · Others · VSON-8(2x3)

ISO6520REUR from Texas Instruments, in a VSON-8(2x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VCC1 power_in Side 1 power supply, recommended 1.71V to 1.89V or 2.25V to 5.5V with respect to GND1 (absolute maximum 6V).
2 INA input Channel A input, referenced to GND1, with VIH of at least 0.7 x VCCI and VIL of at most 0.3 x VCCI.
3 INB input Channel B input, referenced to GND1, with VIH of at least 0.7 x VCCI and VIL of at most 0.3 x VCCI.
4 GND1 power_in Ground connection for VCC1.
5 GND2 power_in Ground connection for VCC2.
6 OUTB output Channel B output, referenced to GND2, which defaults high on input power or signal loss for the non-F ISO6520.
7 OUTA output Channel A output, referenced to GND2, which defaults high on input power or signal loss for the non-F ISO6520.
8 VCC2 power_in Side 2 power supply, recommended 1.71V to 1.89V or 2.25V to 5.5V with respect to GND2 (absolute maximum 6V).
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package VSON-8(2x3)
Category Others
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage VCC1 to GND1 VCC1 -0.5 6 V 4
Supply voltage VCC2 to GND2 VCC2 -0.5 6 V 4
Output current Io -15 15 mA 4
Operating junction temperature TJ 150 °C 4
Storage temperature Tstg -65 150 °C 4
Transient isolation voltage AC (REU-8) 2000 VRMS t=60s 4
Transient isolation voltage DC (REU-8) 2828 VDC t=60s 4
ESD HBM V(ESD) -6000 6000 V HBM, all pins 4
ESD CDM V(ESD) -1500 1500 V CDM, all pins 4
Supply voltage side 1 VCC1 1.71 1.89 V VCC = 1.8 V 4
Supply voltage side 1 VCC1 2.25 5.5 V VCC = 2.5 V to 5 V 4
Supply voltage side 2 VCC2 1.71 1.89 V VCC = 1.8 V 4
Supply voltage side 2 VCC2 2.25 5.5 V VCC = 2.5 V to 5 V 4
Data rate DR 0 50 Mbps 5
Ambient temperature TA -40 25 125 °C 5
Functional isolation working voltage AC (REU-8) VIOWM 450 VRMS AC sine wave, TDDB test 5
Functional isolation working voltage DC (REU-8) VIOWM 637 VDC 5
Junction-to-ambient thermal resistance (REU-8) RθJA 143.4 °C/W DFN (REU-8) 5
Low-level output voltage VOL 0.4 V IOL = 4 mA; VCC = 5 V ± 10% 6
High-level input current IIH 10 µA VIH = VCCI at INx; 5 V 6
Low-level input current IIL -10 µA VIL = 0 V at INx; 5 V 6
Common mode transient immunity CMTI 100 150 kV/μs VI = VCC or 0 V, VCM = 700V; 5 V 6
Input capacitance Ci 2.8 pF f = 2 MHz, VCC = 5 V 6
Low-level output voltage VOL 0.2 V IOL = 2mA; VCC = 3.3 V ± 10% 7
High-level input current IIH 10 µA VIH = VCCI at INx; 3.3 V 7
Low-level input current IIL -10 µA VIL = 0 V at INx; 3.3 V 7
Common mode transient immunity CMTI 100 150 kV/μs VI = VCC or 0 V, VCM = 700V; 3.3 V 7
Input capacitance Ci 2.8 pF f = 2 MHz, VCC = 3.3 V 7
Low-level output voltage VOL 0.1 V IOL = 1mA; VCC = 2.5 V ± 10% 8
High-level input current IIH 10 µA VIH = VCCI at INx; 2.5 V 8
Low-level input current IIL -10 µA VIL = 0 V at INx; 2.5 V 8
Common mode transient immunity CMTI 100 150 kV/μs VI = VCC or 0 V, VCM = 700V; 2.5 V 8
Input capacitance Ci 2.8 pF f = 2 MHz, VCC = 2.5 V 8
Low-level output voltage VOL 0.1 V IOL = 1mA; VCC = 1.8 V ± 5% 9
High-level input current IIH 10 µA VIH = VCCI at INx; 1.8 V 9
Low-level input current IIL -10 µA VIL = 0 V at INx; 1.8 V 9
Common mode transient immunity CMTI 100 150 kV/μs VI = VCC or 0 V, VCM = 700V; 1.8 V 9
Input capacitance Ci 2.8 pF f = 2 MHz, VCC = 1.8 V 9
Propagation delay time tPLH, tPHL 11 18 ns See Figure 6-1; 5 V 10
Pulse width distortion PWD 0.2 7 ns /tPHL, tPLH/; 5 V 10
Output signal rise time tr 2.6 4.5 ns See Figure 6-1; 5 V 10
Pulse width distortion PWD 0.5 7 ns /tPHL, tPLH/; 3.3 V 10
Output signal rise time tr 1.6 3.2 ns See Figure 6-1; 3.3 V 10
Propagation delay time tPLH, tPHL 12 20.5 ns See Figure 6-1; 2.5 V 11
Pulse width distortion PWD 0.6 7.1 ns /tPHL, tPLH/; 2.5 V 11
Output signal rise time tr 2 4 ns See Figure 6-1; 2.5 V 11
Propagation delay time tPLH, tPHL 15 25.1 ns See Figure 7-1; 1.8 V 11
Pulse width distortion PWD 0.7 8.2 ns /tPHL, tPLH/; 1.8 V 11
Output signal rise time tr 2.7 5.3 ns See Figure 7-1; 1.8 V 11

CAD (KiCad official)

  • Symbol: ISO6520REUR
  • Footprint: Package_SON:SON-8-1EP_3x2mm_P0.5mm_EP1.4x1.6mm
  • 3D model: VSON-8(2x3), generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.9 mm nominal QFN height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: iso6520reur-etched.step / iso6520reur-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); iso6520reur.step / iso6520reur.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (34 pp, sha256 c55c82616f62bf34, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF