component
ISO5851DWR
Public Made by Adomby adom
Texas Instruments Gate Drive ICs, SOIC-16-300mil. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownISO5851DWR
Texas Instruments · Gate Drive ICs · SOIC-16-300mil
ISO5851DWR from Texas Instruments, in a SOIC-16-300mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VEE2 | power_in | Output negative supply; connect to GND2 for unipolar supply applications (recommended VEE2 -15 V to 0 V relative to GND2). |
| 2 | DESAT | input | Desaturation voltage input for IGBT overload detection, rated GND2 - 0.3 V to VCC2 + 0.3 V. |
| 3 | GND2 | power_in | Gate drive common; connect to IGBT emitter. |
| 4 | NC | unconnected | Not connected. |
| 5 | VCC2 | power_in | Most positive output supply potential, recommended 15 V to 30 V relative to GND2. |
| 6 | OUT | output | Gate drive voltage output with 2.5 A peak source and 5 A peak sink capability. |
| 7 | CLAMP | output | Miller clamp output designed for Miller current up to 2 A, activated when gate voltage falls below 2 V at turn-off. |
| 8 | VEE2 | power_in | Output negative supply; connect to GND2 for unipolar supply applications (recommended VEE2 -15 V to 0 V relative to GND2). |
| 9 | GND1 | power_in | Input ground. |
| 10 | IN+ | input | Non-inverting gate drive voltage control input with CMOS-compatible thresholds (VIH 0.7 × VCC1, VIL 0.3 × VCC1). |
| 11 | IN- | input | Inverting gate drive voltage control input with CMOS-compatible thresholds (VIH 0.7 × VCC1, VIL 0.3 × VCC1). |
| 12 | RDY | output | Power-good output, active high when both input and output supplies are good. |
| 13 | FLT | output | Fault output, low-active during DESAT condition and latched until reset by RST. |
| 14 | RST | input | Reset input; apply a low pulse of at least 800 ns to reset the fault latch. |
| 15 | VCC1 | power_in | Positive input supply, 3 V to 5.5 V. |
| 16 | GND1 | power_in | Input ground. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-16-300mil |
| Category | Power Supply Chip |
| Pins | 16 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage input side | VCC1 | -0.3 | 6 | V | GND1, 0.3 to 6 | 6 | |
| Positive supply voltage output side | VCC2 | -0.3 | 35 | V | VCC2, GND2 | 6 | |
| Negative supply voltage output side | VEE2 | -17.5 | 0.3 | V | VEE2, GND2 | 6 | |
| Total supply output voltage | V(SUP2) | -0.3 | 35 | V | VCC2, VEE2 | 6 | |
| Gate driver high output current | I(OUTH) | 2.7 | A | max pulse width = 10 μs, max duty cycle = 0.2% | 6 | ||
| Gate driver low output current | I(OUTL) | 5.5 | A | max pulse width = 10 μs, max duty cycle = 0.2% | 6 | ||
| Output current of FLT, RDY | I(LOP) | 10 | mA | 6 | |||
| Junction temperature | TJ | -40 | 150 | °C | 6 | ||
| Storage temperature | TSTG | -65 | 150 | °C | 6 | ||
| ESD HBM | V(ESD) | -4000 | 4000 | V | Human body model, ANSI/ESDA/JEDEC JS-001 | 6 | |
| ESD CDM | V(ESD) | -1500 | 1500 | V | Charged-device model, JESD22-C101 | 6 | |
| Supply voltage input side | VCC1 | 3 | 5.5 | V | 6 | ||
| Positive supply voltage output side | VCC2 | 15 | 30 | V | VCC2, GND2 | 6 | |
| Negative supply voltage output side | VEE2 | -15 | 0 | V | VEE2, GND2 | 6 | |
| Total supply voltage output side | V(SUP2) | 15 | 30 | V | VCC2, VEE2 | 6 | |
| Pulse width at IN+, IN- for full output | tUI | 40 | ns | CLOAD = 1 nF | 6 | ||
| Pulse width at RST for resetting fault latch | tRST | 800 | ns | 6 | |||
| Ambient temperature | TA | -40 | 25 | 125 | °C | 6 | |
| Junction-to-ambient thermal resistance | RθJA | 99.6 | °C/W | DW (SOIC) 16 pins | 6 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 48.5 | °C/W | 7 | |||
| Junction-to-board thermal resistance | RθJB | 56.5 | °C/W | 7 | |||
| Maximum power dissipation | PD | 1255 | mW | 7 | |||
| Input supply quiescent current | IQ1 | 2.8 | 4.5 | mA | 10 | ||
| Output supply quiescent current | IQ2 | 3.6 | 6 | mA | 10 | ||
| High-level input leakage at (IN+) | IIH | 100 | µA | IN+ = VCC1 | 10 | ||
| Low-level input leakage at (IN-, RST) | IIL | -100 | µA | IN- = GND1, RST = GND1 | 10 | ||
| Low-level output voltage at FLT, RDY | VOL | 0.2 | V | I(FLT) = 5 mA | 10 | ||
| Active output pulldown voltage | V(OUTPD) | 2 | V | IOUT = 200 mA, VCC2 = open | 10 | ||
| High-level output peak current | I(OUTH) | 1.5 | 2.5 | A | IN+ = high, IN- = low, VOUT = VCC2 - 15 V | 10 | |
| Low-level output peak current | I(OUTL) | 3.4 | 5 | A | IN+ = low, IN- = high, VOUT = VEE2 + 15 V | 10 | |
| Low-level clamp current | I(CLP) | 1.6 | 2.5 | A | V(CLAMP) = VEE2 + 2.5 V | 10 | |
| Clamp threshold voltage | V(CLTH) | 1.6 | 2.1 | 2.5 | V | 10 | |
| Clamping voltage (VOUT - VCC2) | V(CLP_OUT) | 0.8 | 1.3 | V | IN+ = high, IN- = low, tCLP = 10 µs, I(OUTH) = 500 mA | 10 | |
| Clamping voltage at CLAMP | V(CLP_CLAMP) | 0.7 | 1.1 | V | IN+ = High, IN- = Low, I(CLP) = 20 mA | 10 | |
| Blanking capacitor charge current | I(CHG) | 0.42 | 0.5 | 0.58 | mA | V(DESAT) - GND2 = 2 V | 10 |
| DESAT threshold voltage with respect to GND2 | V(DSTH) | 8.3 | 9 | 9.5 | V | 10 | |
| DESAT voltage with respect to GND2, when OUT is driven low | V(DSL) | 0.4 | 1 | V | 10 | ||
| Output signal rise time | tr | 12 | 20 | 35 | ns | CLOAD = 1 nF | 11 |
| Output signal fall time | tf | 12 | 20 | 37 | ns | CLOAD = 1 nF | 11 |
| Propagation Delay | tPLH, tPHL | 76 | 110 | ns | CLOAD = 1 nF | 11 | |
| Pulse Skew /tPHL, tPLH/ | tsk-p | 20 | ns | 11 | |||
| Part-to-part skew | tsk-pp | 30 | ns | Measured at same supply voltage and temperature condition | 11 | ||
| Glitch filter on IN+, IN-, RST | tGF | 20 | 30 | 40 | ns | 11 | |
| DESAT sense to 10% OUT delay | tDESAT (10%) | 300 | 415 | 500 | ns | 11 | |
| DESAT sense to FLT-low delay | tDESAT (FLT) | 2000 | 2420 | ns | see 图 8-3 | 11 | |
| Leading edge blanking time | tLEB | 330 | 400 | 500 | ns | see 图 8-1 and 图 8-2 | 11 |
| Input capacitance | CI | 2 | pF | VI = VCC1/2 + 0.4 x sin(2πft), f = 1 MHz, VCC1 = 5 V | 11 | ||
| Common-mode transient immunity | CMTI | 100 | 120 | kV/μs | VCM = 1500 V, see 图 8-4 | 11 |
CAD (KiCad official)
- Symbol:
ISO5851DWR - Footprint:
Package_SO:SOIC-16_3.9x9.9mm_P1.27mm - 3D model: SOIC-16-300mil (KiCad packages3D, STEP)
- 3D model files:
iso5851dwr-etched.step/iso5851dwr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);iso5851dwr.step/iso5851dwr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (41 pp, sha256
2d6206edde371291, retrieved 2026-10-23, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).