component

ISL9N308AD3-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsisl9n308ad3-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
isl9n308ad3-vb / README.md
History Download
Ray Publish 0.1.0 494c334 17d ago

ISL9N308AD3-VB

VBsemi Elec · MOSFETs · TO-252

ISL9N308AD3-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal, with the gate-source voltage rated at VGS = ±20 V (absolute maximum).
2 D passive Drain terminal, with drain-source voltage rated at 30 V and continuous drain current of 60 A at TC = 70 °C (TJ = 175 °C).
3 S passive Source terminal, with continuous source-drain diode current rated at 90 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 30 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1 2.5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
Drain-Source On-State Resistance RDS(on) 0.005 Ω VGS = 10 V, ID = 8.8 A 2
Drain-Source On-State Resistance RDS(on) 0.006 Ω VGS = 4.5 V, ID = 37 A 2
Total Gate Charge Qg 61 107 nC VDS = 15 V, VGS = 10 V, ID = 8.8 A 2
Total Gate Charge Qg 31.5 50 nC VDS = 15 V, VGS = 4.5 V, ID = 28.8 A 2
Gate Resistance Rg 1.4 2.1 Ω f = 1 MHz 2
Body Diode Voltage VSD 0.8 1.2 V IS = 22 A 2
Body Diode Reverse Recovery Time trr 52 78 ns IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 70.2 105 nC IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 60 A TJ = 175 °C, TC = 70 °C 1
Continuous Drain Current ID 25.8 A TJ = 175 °C, TA = 25 °C 1
Continuous Drain Current ID 22 A TJ = 175 °C, TA = 70 °C 1
Pulsed Drain Current IDM 250 A 1
Single Pulse Avalanche Energy EAS 94.8 mJ L = 0.1 mH 1
Continuous Source-Drain Diode Current IS 90 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 3.13 A TA = 25 °C 1
Maximum Power Dissipation PD 205 W TC = 25 °C 1
Maximum Power Dissipation PD 135 W TC = 70 °C 1
Maximum Power Dissipation PD 3.75 W TA = 25 °C 1
Maximum Power Dissipation PD 2.63 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Maximum Junction-to-Ambient RthJA 32 40 °C/W t ≤ 10 sec 1
Maximum Junction-to-Case RthJC 0.5 0.6 °C/W Steady State 1

CAD (KiCad official)

  • Symbol: ISL9N308AD3-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: isl9n308ad3-vb-etched.step / isl9n308ad3-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); isl9n308ad3-vb.step / isl9n308ad3-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 988b1210388cfaa8, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF