component
ISL28213FBZ
Public Made by Adomby adom
RENESAS Pre-ordered Chips, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownISL28213FBZ
RENESAS · Pre-ordered Chips · SOIC-8
ISL28213FBZ from RENESAS, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | OUT_A | output | Channel A amplifier output. |
| 2 | IN-_A | input | Channel A inverting (negative) input. |
| 3 | IN+_A | input | Channel A non-inverting (positive) input. |
| 4 | VS- | power_in | Negative supply voltage. |
| 5 | IN+_B | input | Channel B non-inverting (positive) input. |
| 6 | IN-_B | input | Channel B inverting (negative) input. |
| 7 | OUT_B | output | Channel B amplifier output. |
| 8 | VS+ | power_in | Positive supply voltage, 1.8V to 5.5V total supply range. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | RENESAS |
| Package | SOIC-8 |
| Category | Interface ICs |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input Offset Voltage | VOS | -4 | 0.5 | 4 | mV | TA = +25°C | 4 |
| Input Offset Voltage (over temperature) | VOS | -5 | 5 | mV | -40°C to +125°C | 4 | |
| Input Bias Current | IB | -20 | 3 | 20 | pA | ISL28213, ISL28413 | 4 |
| Input Bias Current (over temperature) | IB | -50 | 50 | pA | ISL28213, ISL28413; -40°C to +125°C | 4 | |
| Input Offset Current | IOS | 1 | 30 | pA | 4 | ||
| Common Mode Input Voltage Range | -0.1 | 5.1 | V | 4 | |||
| Common Mode Rejection Ratio | CMRR | 72 | dB | VCM = -0.1V to 5.1V | 4 | ||
| Common Mode Rejection Ratio (over temperature) | CMRR | 70 | dB | -40°C to +125°C | 4 | ||
| Power Supply Rejection Ratio | PSRR | 71 | dB | VS = 1.8V to 5.5V | 4 | ||
| Power Supply Rejection Ratio (over temperature) | PSRR | 70 | dB | -40°C to +125°C | 4 | ||
| Output Voltage Swing, High | VOH | 4.985 | 4.993 | V | RL = 10kΩ | 4 | |
| Output Voltage Swing, High (over temperature) | VOH | 4.98 | V | RL = 10kΩ; -40°C to +125°C | 4 | ||
| Output Voltage Swing, Low | VOL | 13 | 15 | mV | RL = 10kΩ | 4 | |
| Output Voltage Swing, Low (over temperature) | VOL | 20 | mV | RL = 10kΩ; -40°C to +125°C | 4 | ||
| Supply Voltage | V+ | 1.8 | 5.5 | V | 4 | ||
| Supply Current per Amplifier | IS | 90 | 130 | µA | RL = OPEN | 4 | |
| Supply Current per Amplifier (over temperature) | IS | 170 | µA | RL = OPEN; -40°C to +125°C | 4 | ||
| Input Offset Voltage Temperature Coefficient | TCVOS | 5 | µV/°C | -40°C to +125°C | 4 | ||
| Input Capacitance | CIN | 1 | pF | 4 | |||
| Output Source Short Circuit Current | ISC+ | -22 | mA | RL = 10Ω to V- | 5 | ||
| Output Sink Short Circuit Current | ISC- | 16 | mA | RL = 10Ω to V+ | 5 | ||
| Gain Bandwidth Product | GBWP | 2 | MHz | VS = ±2.5V, AV = 100, RF = 100kΩ, RG = 1kΩ, RL = 10kΩ to VCM | 5 | ||
| Peak-to-Peak Input Noise Voltage | eN VP-P | 14 | µVP-P | VS = ±2.5V, f = 0.1Hz to 10Hz | 5 | ||
| Input Noise Voltage Density | eN | 55 | nV/√(Hz) | VS = ±2.5V, f = 1kHz | 5 | ||
| Input Noise Voltage Density | eN | 29 | nV/√(Hz) | VS = ±2.5V, f = 10kHz | 5 | ||
| Input Noise Current Density | iN | 5 | fA/√(Hz) | VS = ±2.5V, f = 1kHz | 5 | ||
| Differential Input Capacitance | Cin | 1 | pF | VS = ±2.5V, f = 1MHz | 5 | ||
| Common Mode Input Capacitance | 1.3 | pF | 5 | ||||
| Slew Rate | SR | 1 | V/µs | 20% to 80% VOUT, VOUT = 0.5V to 4.5V | 5 | ||
| Small Signal Rise Time | tr | 100 | ns | 10% to 90%, VS = ±2.5V, AV = +1, VOUT = 0.05VP-P, RF = 0Ω, RL = 10kΩ, CL = 15pF | 5 | ||
| Small Signal Fall Time | tf | 115 | ns | 10% to 90%, VS = ±2.5V, AV = +1, VOUT = 0.05VP-P, RF = 0Ω, RL = 10kΩ, CL = 15pF | 5 | ||
| Settling Time to 0.1%, 4VP-P Step | ts | 7.5 | µs | VS = ±2.5V, AV = +1, RF = 0Ω, RL = 10kΩ, CL = 1.2pF | 5 | ||
| Supply Turn-on Voltage Slew Rate | 1 | V/µs | TA = +25°C | 4 | |||
| Differential Input Current | 20 | mA | TA = +25°C | 4 | |||
| ESD Rating, Human Body Model | 4000 | V | 4 | ||||
| ESD Rating, Machine Model | 350 | V | ISL28113, ISL28213 | 4 | |||
| ESD Rating, Charged Device Model | 2000 | V | 4 | ||||
| Ambient Operating Temperature Range | -40 | 125 | °C | 4 | |||
| Storage Temperature Range | -65 | 150 | °C | 4 | |||
| Operating Junction Temperature | 125 | °C | 4 | ||||
| Thermal Resistance Junction to Ambient | θJA | 126 | °C/W | 8 Ld SOIC Package | 4 | ||
| Thermal Resistance Junction to Case | θJC | 90 | °C/W | 8 Ld SOIC Package | 4 |
CAD (KiCad official)
- Symbol:
ISL28213FBZ - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
isl28213fbz-etched.step/isl28213fbz-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);isl28213fbz.step/isl28213fbz.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: RENESAS datasheet (23 pp, sha256
324db1dc6c15db08, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).