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Contents

README

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ISL2111BR4Z

RENESAS · Pre-ordered Chips · DFN-8-EP(4x4)

ISL2111BR4Z from RENESAS, in a DFN-8-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD power_in Positive supply to the lower gate driver, bypassed to VSS, with a recommended operating range of 8V to 14V.
2 HB power_in High-side bootstrap supply; the positive side of the external bootstrap capacitor connects here, and the bootstrap diode is on-chip.
3 HO output High-side output that connects to the gate of the high-side power MOSFET.
4 HS passive High-side source connection to the source of the high-side power MOSFET and the negative side of the bootstrap capacitor, recommended -1V to 100V continuous.
5 HI input High-side logic input, with 3.3V/TTL compatible thresholds on the ISL2111.
6 LI input Low-side logic input, with 3.3V/TTL compatible thresholds on the ISL2111.
7 VSS power_in Chip negative supply, which will generally be ground.
8 LO output Low-side output that connects to the gate of the low-side power MOSFET.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer RENESAS
Package DFN-8-EP(4x4)
Category Interface ICs
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VDD Quiescent Current IDD 0.3 0.55 mA ISL2111; LI = HI = 0V 6
VDD Operating Current IDDO 3.5 5.5 mA ISL2111; f = 500kHz 6
Total HB Quiescent Current IHB 0.1 0.2 mA LI = HI = 0V 6
Total HB Operating Current IHBO 3.4 5.5 mA f = 500kHz 6
HB to VSS Current, Quiescent IHBS 0.05 10 µA LI = HI = 0V; VHB = VHS = 114V 6
Low Level Input Voltage Threshold VIL 1.2 1.8 V ISL2111 6
High Level Input Voltage Threshold VIH 1.8 2.4 V ISL2111 6
Input Pull-Down Resistance RI 100 210 500 kΩ 7
VDD Rising Threshold VDDR 5.8 6.6 7.4 V 7
HB Rising Threshold VHBR 5 6.1 7.1 V 7
Low Current Forward Voltage VDL 0.5 0.7 V IVDD-HB = 100µA 7
High Current Forward Voltage VDH 0.7 1 V IVDD-HB = 100mA 7
Dynamic Resistance RD 0.7 1.5 Ω IVDD-HB = 100mA 7
Low Level Output Voltage (LO) VOLL 0.1 0.25 V ILO = 100mA 7
High Level Output Voltage (LO) VOHL 0.16 0.3 V ILO = -100mA, VOHL = VDD - VLO 7
Low Level Output Voltage (HO) VOLH 0.1 0.25 V IHO = 100mA 7
High Level Output Voltage (HO) VOHH 0.16 0.3 V IHO = -100mA, VOHH = VHB - VHO 7
Lower Turn-Off Propagation Delay (LI Falling to LO Falling) tLPHL 32 60 ns 7
Upper Turn-Off Propagation Delay (HI Falling to HO Falling) tHPHL 32 60 ns 7
Lower Turn-On Propagation Delay (LI Rising to LO Rising) tLPLH 39 60 ns 7
Upper Turn-On Propagation Delay (HI Rising to HO Rising) tHPLH 38 60 ns 7
Delay Matching: Upper Turn-Off to Lower Turn-On tMON 8 16 ns 7
Delay Matching: Lower Turn-Off to Upper Turn-On tMOFF 6 16 ns 7
Either Output Rise Time (3V to 9V) tR 0.3 0.5 µs CL = 0.1µF 7
Either Output Fall Time (9V to 3V) tF 0.19 0.4 µs CL = 0.1µF 7
Minimum Input Pulse Width that Changes the Output tPW 50 ns 7
Supply Voltage, VDD, VHB - VHS VDD -0.3 18 V Notes 4, 5 6
LI and HI Voltages LI, HI -0.3 V Maximum is VDD + 0.3V (Note 5) 6
Voltage on LO LO -0.3 V Maximum is VDD + 0.3V (Note 5) 6
Voltage on HO relative to HS HO-HS -2 V Repetitive Transient < 100ns 6
Voltage on LO relative to GND LO -2 V Repetitive Transient < 100ns 6
Voltage on HS (Continuous) HS -1 110 V Note 5 6
Voltage on HB HB 118 V Note 5 6
Average Current in VDD to HB Diode 100 mA 6
Storage Temperature Range -65 150 °C 6
Junction Temperature Range TJ -55 150 °C 6
Supply Voltage, VDD VDD 8 14 V 6
Voltage on HS HS -1 100 V 6
Voltage on HS (Repetitive Transient < 100ns) HS -5 105 V Repetitive Transient < 100ns 6
Voltage on HB above HS HB-HS 7 14 V VHS+7V to VHS+14V 6
Voltage on HB relative to VDD HB-VDD -1 100 V VDD - 1V to VDD+100V 6
HS Slew Rate 50 V/ns <50V/ns 6
Max Power Dissipation at +25°C in Free Air, 8 Ld DFN 3.1 W 8 Ld DFN (Notes 7, 8) 6
Thermal Resistance, Junction to Ambient, 8 Ld DFN JA 40 °C/W 8 Ld DFN (Notes 7, 8) 6
Thermal Resistance, Junction to Case, 8 Ld DFN JC 4 °C/W 8 Ld DFN (Notes 7, 8) 6

CAD (KiCad official)

  • Symbol: ISL2111BR4Z
  • Footprint: Package_DFN_QFN:DFN-8-1EP_4x4mm_P0.8mm_EP2.5x3.6mm
  • 3D model: DFN-8-EP(4x4) (KiCad packages3D, STEP)
  • 3D model files: isl2111br4z-etched.step / isl2111br4z-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); isl2111br4z.step / isl2111br4z.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: RENESAS datasheet (17 pp, sha256 5040c7f465690f8c, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF