component
IS25WP128F-JBLE-TR
Public Made by Adomby adom
ISSI Integrated Silicon Solution NOR FLASH, SOIC-8-208mil. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IS25WP128F-JBLE-TR
ISSI Integrated Silicon Solution · NOR FLASH · SOIC-8-208mil
IS25WP128F-JBLE-TR from ISSI Integrated Silicon Solution, in a SOIC-8-208mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CE# | input | Chip Enable: driving CE# high deselects the device and puts the outputs in high impedance, while driving it low selects the device, and after power-up CE# must go high-to-low before an instruction is accepted. |
| 2 | SO (IO1) | bidirectional | Serial Data Output (SO, IO1) is read on the falling edge of SCK in standard SPI and becomes the bidirectional IO1 in Dual and Quad SPI modes. |
| 3 | WP# (IO2) | bidirectional | Write Protect/Serial Data IO2: with SRWD set to 1, pulling WP# low write-protects the Status Register bits, and this pin becomes IO2 when the QE bit is set to 1, so WP# is then unavailable. |
| 4 | GND | power_in | Ground: connect to ground when referenced to Vcc. |
| 5 | SI (IO0) | bidirectional | Serial Data Input (SI, IO0) writes instructions, addresses or data on the rising edge of SCK in standard SPI and becomes the bidirectional IO0 in Dual and Quad SPI modes. |
| 6 | SCK | input | Serial Data Clock: synchronizes the input and output timing operations of the device. |
| 7 | HOLD# or RESET# (IO3) | bidirectional | HOLD# pauses serial communication while active low with CE# low (SO goes high impedance) and is the default function, or it can be set to RESET# via the P7 bit of the Read Register; when QE=1 it becomes IO3. |
| 8 | Vcc | power_in | Power: device core power supply; for the IS25WP128F the supply range is 1.65V to 1.95V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ISSI Integrated Silicon Solution |
| Package | SOIC-8-208mil |
| Category | Memory |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input Voltage with Respect to Ground on All Pins | -0.5 | V | 163 | ||||
| All Output Voltage with Respect to Ground | -0.5 | V | 163 | ||||
| Storage Temperature | -65 | 150 | °C | 163 | |||
| Surface Mount Lead Soldering Temperature | 260 | °C | Lead-free package, 3 seconds | 163 | |||
| VCC supply voltage (IS25WP) | VCC | -0.5 | 2.5 | V | IS25WP | 163 | |
| Operating Temperature | -40 | 105 | °C | Extended Grade E | 163 | ||
| VCC Power Supply (IS25WP) | VCC | 1.65 | 1.8 | 1.95 | V | IS25WP | 163 |
| VCC Active Read current NORD | ICC1 | 8 | 9 | mA | NORD at 80MHz | 164 | |
| VCC Active Read current FRD Single | ICC1 | 9 | 11 | mA | FRD Single at 166MHz | 164 | |
| VCC Active Read current FRD Dual | ICC1 | 11 | 12 | mA | FRD Dual at 166MHz | 164 | |
| VCC Active Read current FRD Quad | ICC1 | 14 | 15 | mA | FRD Quad at 166MHz | 164 | |
| VCC Active Read current FRD Single | ICC1 | 9 | 10.5 | mA | FRD Single at 133MHz | 164 | |
| VCC Active Read current FRD Dual | ICC1 | 10 | 11 | mA | FRD Dual at 133MHz | 164 | |
| VCC Active Read current FRD Quad | ICC1 | 12.5 | 13.5 | mA | FRD Quad at 133MHz | 164 | |
| VCC Active Read current FRD Quad | ICC1 | 10 | 11 | mA | FRD Quad at 83MHz | 164 | |
| VCC Active Read current FRD Quad | ICC1 | 11 | 12 | mA | FRD Quad at 104MHz | 164 | |
| VCC Active Read current FRD Single DTR | ICC1 | 8.5 | 9.5 | mA | FRD Single DTR at 80MHz | 164 | |
| VCC Active Read current FRD Dual DTR | ICC1 | 10 | 11 | mA | FRD Dual DTR at 80MHz | 164 | |
| VCC Active Read current FRD Quad DTR | ICC1 | 11 | 12 | mA | FRD Quad DTR at 80MHz | 164 | |
| VCC Program Current | ICC2 | 30 | mA | CE# = VCC, 105°C | 164 | ||
| VCC WRSR Current | ICC3 | 30 | mA | CE# = VCC, 105°C | 164 | ||
| VCC Erase Current (SER/4SER/BER32/4BER32/BER64/4BER64) | ICC4 | 30 | mA | CE# = VCC, 105°C | 164 | ||
| VCC Erase Current (CE) | ICC5 | 30 | mA | CE# = VCC, 105°C | 164 | ||
| VCC Standby Current CMOS (IS25WP) | ISB1 | 45 | µA | CE# = VCC, VIN = GND or VCC, IS25WP, 105°C | 164 | ||
| Deep power down current (IS25WP) | ISB2 | 15 | µA | CE# = VCC, VIN = GND or VCC, IS25WP, 105°C | 164 | ||
| Input Leakage Current | ILI | -1 | 1 | µA | VIN = 0V to VCC | 164 | |
| Output Leakage Current | ILO | -1 | 1 | µA | VIN = 0V to VCC | 164 | |
| Input Low Voltage | VIL | -0.5 | V | 164 | |||
| Output Low Voltage | VOL | 0.2 | V | IOL = 100 µA | 164 | ||
| Clock Frequency fCT (IS25WP) | fCT | 0 | 166 | MHz | VCC = 1.7V to 1.95V | 166 | |
| Clock Frequency fCT (IS25WP) | fCT | 0 | 133 | MHz | VCC = 1.65V to 1.95V | 166 | |
| Clock Frequency for fast read DTR | fCT | 0 | 80 | MHz | SPI DTR, Dual DTR, Dual I/O DTR, Quad I/O DTR, QPI DTR | 166 | |
| Clock Frequency for read (03h) | fC | 0 | 80 | MHz | 166 | ||
| SCK Rise Time (peak to peak) | tCLCH | 0.1 | V/ns | 166 | |||
| SCK Fall Time (peak to peak) | tCHCL | 0.1 | V/ns | 166 | |||
| CE# High Time for read mode | tCEH | 7 | ns | For read mode | 166 | ||
| CE# High Time for write mode | tCEH | 20 | ns | For write mode | 166 | ||
| CE# Setup Time | tCS | 3 | ns | 166 | |||
| CE# Hold Time | tCH | 3 | ns | 166 | |||
| CE# Not Active Hold Time | tCHSL | 3 | ns | 166 | |||
| CE# Not Active Setup Time | tSHCH | 3 | ns | 166 | |||
| Data In Setup Time STR | tDS | 2 | ns | STR | 166 | ||
| Data In Setup Time DTR | tDS | 1.5 | ns | DTR | 166 | ||
| Data In Hold Time STR | tDH | 2 | ns | STR | 166 | ||
| Data In Hold Time DTR | tDH | 1.5 | ns | DTR | 166 | ||
| Output Valid (IS25WP) | tV | 5.5 | ns | 1.65~1.95V, -40°C to 125°C, @10pF | 166 | ||
| Output Valid (IS25WP) | tV | 7 | ns | 1.65~1.95V, -40°C to 125°C, @30pF | 166 | ||
| Output Hold Time | tOH | 2 | ns | 166 | |||
| Output Disable Time | tDIS | 8 | ns | 166 | |||
| Write Protect Setup Time | tWHSL | 20 | ns | 166 | |||
| Write Protect Hold Time | tSHWL | 100 | ns | 166 | |||
| Sector Erase Time (4Kbyte) | tEC | 100 | 300 | ms | 167 | ||
| Block Erase Time (64Kbyte) | tEC | 0.17 | 1 | s | 167 | ||
| Chip Erase Time | tEC | 35 | 90 | s | 167 | ||
| Page Program Time | tPP | 0.2 | 0.8 | ms | 167 | ||
| Write Status Register time | tW | 2 | 15 | ms | 167 | ||
| Vcc(min) to CE# Low (power-up) | tVCE | 300 | µs | 170 | |||
| Endurance | 100000 | Cycles | JEDEC Standard A117 | 171 | |||
| Input Capacitance (CE#, SCK) | CIN | 6 | pF | VIN = 0V, TA = 25°C, VCC = 1.8V, 1MHz | 165 | ||
| Input/Output Capacitance (other pins) | CIN/OUT | 10 | pF | VIN/OUT = 0V, TA = 25°C, VCC = 1.8V, 1MHz | 165 |
CAD (KiCad official)
- Symbol:
IS25WP128F-JBLE-TR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8-208mil (KiCad packages3D, STEP)
- 3D model files:
is25wp128f-jble-tr-etched.step/is25wp128f-jble-tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);is25wp128f-jble-tr.step/is25wp128f-jble-tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ISSI Integrated Silicon Solution datasheet (180 pp, sha256
8eee02b03531933f, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IS25WP128F-JBLE-TR
**ISSI Integrated Silicon Solution** · NOR FLASH · SOIC-8-208mil
IS25WP128F-JBLE-TR from ISSI Integrated Silicon Solution, in a SOIC-8-208mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CE# | input | Chip Enable: driving CE# high deselects the device and puts the outputs in high impedance, while driving it low selects the device, and after power-up CE# must go high-to-low before an instruction is accepted. |
| 2 | SO (IO1) | bidirectional | Serial Data Output (SO, IO1) is read on the falling edge of SCK in standard SPI and becomes the bidirectional IO1 in Dual and Quad SPI modes. |
| 3 | WP# (IO2) | bidirectional | Write Protect/Serial Data IO2: with SRWD set to 1, pulling WP# low write-protects the Status Register bits, and this pin becomes IO2 when the QE bit is set to 1, so WP# is then unavailable. |
| 4 | GND | power_in | Ground: connect to ground when referenced to Vcc. |
| 5 | SI (IO0) | bidirectional | Serial Data Input (SI, IO0) writes instructions, addresses or data on the rising edge of SCK in standard SPI and becomes the bidirectional IO0 in Dual and Quad SPI modes. |
| 6 | SCK | input | Serial Data Clock: synchronizes the input and output timing operations of the device. |
| 7 | HOLD# or RESET# (IO3) | bidirectional | HOLD# pauses serial communication while active low with CE# low (SO goes high impedance) and is the default function, or it can be set to RESET# via the P7 bit of the Read Register; when QE=1 it becomes IO3. |
| 8 | Vcc | power_in | Power: device core power supply; for the IS25WP128F the supply range is 1.65V to 1.95V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ISSI Integrated Silicon Solution |
| Package | SOIC-8-208mil |
| Category | Memory |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input Voltage with Respect to Ground on All Pins | | -0.5 | | | V | | 163 |
| All Output Voltage with Respect to Ground | | -0.5 | | | V | | 163 |
| Storage Temperature | | -65 | | 150 | °C | | 163 |
| Surface Mount Lead Soldering Temperature | | | | 260 | °C | Lead-free package, 3 seconds | 163 |
| VCC supply voltage (IS25WP) | VCC | -0.5 | | 2.5 | V | IS25WP | 163 |
| Operating Temperature | | -40 | | 105 | °C | Extended Grade E | 163 |
| VCC Power Supply (IS25WP) | VCC | 1.65 | 1.8 | 1.95 | V | IS25WP | 163 |
| VCC Active Read current NORD | ICC1 | | 8 | 9 | mA | NORD at 80MHz | 164 |
| VCC Active Read current FRD Single | ICC1 | | 9 | 11 | mA | FRD Single at 166MHz | 164 |
| VCC Active Read current FRD Dual | ICC1 | | 11 | 12 | mA | FRD Dual at 166MHz | 164 |
| VCC Active Read current FRD Quad | ICC1 | | 14 | 15 | mA | FRD Quad at 166MHz | 164 |
| VCC Active Read current FRD Single | ICC1 | | 9 | 10.5 | mA | FRD Single at 133MHz | 164 |
| VCC Active Read current FRD Dual | ICC1 | | 10 | 11 | mA | FRD Dual at 133MHz | 164 |
| VCC Active Read current FRD Quad | ICC1 | | 12.5 | 13.5 | mA | FRD Quad at 133MHz | 164 |
| VCC Active Read current FRD Quad | ICC1 | | 10 | 11 | mA | FRD Quad at 83MHz | 164 |
| VCC Active Read current FRD Quad | ICC1 | | 11 | 12 | mA | FRD Quad at 104MHz | 164 |
| VCC Active Read current FRD Single DTR | ICC1 | | 8.5 | 9.5 | mA | FRD Single DTR at 80MHz | 164 |
| VCC Active Read current FRD Dual DTR | ICC1 | | 10 | 11 | mA | FRD Dual DTR at 80MHz | 164 |
| VCC Active Read current FRD Quad DTR | ICC1 | | 11 | 12 | mA | FRD Quad DTR at 80MHz | 164 |
| VCC Program Current | ICC2 | | | 30 | mA | CE# = VCC, 105°C | 164 |
| VCC WRSR Current | ICC3 | | | 30 | mA | CE# = VCC, 105°C | 164 |
| VCC Erase Current (SER/4SER/BER32/4BER32/BER64/4BER64) | ICC4 | | | 30 | mA | CE# = VCC, 105°C | 164 |
| VCC Erase Current (CE) | ICC5 | | | 30 | mA | CE# = VCC, 105°C | 164 |
| VCC Standby Current CMOS (IS25WP) | ISB1 | | | 45 | µA | CE# = VCC, VIN = GND or VCC, IS25WP, 105°C | 164 |
| Deep power down current (IS25WP) | ISB2 | | | 15 | µA | CE# = VCC, VIN = GND or VCC, IS25WP, 105°C | 164 |
| Input Leakage Current | ILI | -1 | | 1 | µA | VIN = 0V to VCC | 164 |
| Output Leakage Current | ILO | -1 | | 1 | µA | VIN = 0V to VCC | 164 |
| Input Low Voltage | VIL | -0.5 | | | V | | 164 |
| Output Low Voltage | VOL | | | 0.2 | V | IOL = 100 µA | 164 |
| Clock Frequency fCT (IS25WP) | fCT | 0 | | 166 | MHz | VCC = 1.7V to 1.95V | 166 |
| Clock Frequency fCT (IS25WP) | fCT | 0 | | 133 | MHz | VCC = 1.65V to 1.95V | 166 |
| Clock Frequency for fast read DTR | fCT | 0 | | 80 | MHz | SPI DTR, Dual DTR, Dual I/O DTR, Quad I/O DTR, QPI DTR | 166 |
| Clock Frequency for read (03h) | fC | 0 | | 80 | MHz | | 166 |
| SCK Rise Time (peak to peak) | tCLCH | | | 0.1 | V/ns | | 166 |
| SCK Fall Time (peak to peak) | tCHCL | | | 0.1 | V/ns | | 166 |
| CE# High Time for read mode | tCEH | 7 | | | ns | For read mode | 166 |
| CE# High Time for write mode | tCEH | 20 | | | ns | For write mode | 166 |
| CE# Setup Time | tCS | 3 | | | ns | | 166 |
| CE# Hold Time | tCH | 3 | | | ns | | 166 |
| CE# Not Active Hold Time | tCHSL | 3 | | | ns | | 166 |
| CE# Not Active Setup Time | tSHCH | 3 | | | ns | | 166 |
| Data In Setup Time STR | tDS | 2 | | | ns | STR | 166 |
| Data In Setup Time DTR | tDS | 1.5 | | | ns | DTR | 166 |
| Data In Hold Time STR | tDH | 2 | | | ns | STR | 166 |
| Data In Hold Time DTR | tDH | 1.5 | | | ns | DTR | 166 |
| Output Valid (IS25WP) | tV | | | 5.5 | ns | 1.65~1.95V, -40°C to 125°C, @10pF | 166 |
| Output Valid (IS25WP) | tV | | | 7 | ns | 1.65~1.95V, -40°C to 125°C, @30pF | 166 |
| Output Hold Time | tOH | 2 | | | ns | | 166 |
| Output Disable Time | tDIS | | | 8 | ns | | 166 |
| Write Protect Setup Time | tWHSL | 20 | | | ns | | 166 |
| Write Protect Hold Time | tSHWL | 100 | | | ns | | 166 |
| Sector Erase Time (4Kbyte) | tEC | | 100 | 300 | ms | | 167 |
| Block Erase Time (64Kbyte) | tEC | | 0.17 | 1 | s | | 167 |
| Chip Erase Time | tEC | | 35 | 90 | s | | 167 |
| Page Program Time | tPP | | 0.2 | 0.8 | ms | | 167 |
| Write Status Register time | tW | | 2 | 15 | ms | | 167 |
| Vcc(min) to CE# Low (power-up) | tVCE | | | 300 | µs | | 170 |
| Endurance | | 100000 | | | Cycles | JEDEC Standard A117 | 171 |
| Input Capacitance (CE#, SCK) | CIN | | | 6 | pF | VIN = 0V, TA = 25°C, VCC = 1.8V, 1MHz | 165 |
| Input/Output Capacitance (other pins) | CIN/OUT | | | 10 | pF | VIN/OUT = 0V, TA = 25°C, VCC = 1.8V, 1MHz | 165 |
## CAD (KiCad official)
- Symbol: `IS25WP128F-JBLE-TR`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8-208mil (KiCad packages3D, STEP)
- 3D model files: `is25wp128f-jble-tr-etched.step` / `is25wp128f-jble-tr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `is25wp128f-jble-tr.step` / `is25wp128f-jble-tr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ISSI Integrated Silicon Solution datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589832110325600256) (180 pp, sha256 `8eee02b03531933f`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/is25wp128f-jble-tr-datasheet.pdf)