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IRLZ14PBF

Public Made by Adom

by adom

Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Datasheet

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Contents

README

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IRLZ14PBF

Vishay Intertech · MOSFETs · TO-220AB

IRLZ14PBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, logic-level drive with RDS(on) specified at VGS = 4 V and 5 V and a maximum VGS of ±10 V.
2 D passive Drain terminal (also connected to the mounting tab), rated for VDS of 60 V and continuous ID of 10 A at TC = 25 °C.
3 S passive Source terminal of the N-channel MOSFET, carrying up to 10 A continuous current at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 1 2 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 10 V 2
Zero Gate Voltage Drain Current IDSS 25 μA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (150 °C) IDSS 250 μA VDS = 48 V, VGS = 0 V, TJ = 150 °C 2
Drain-Source On-State Resistance RDS(on) 0.2 Ω VGS = 5.0 V, ID = 6.0 A 2
Drain-Source On-State Resistance RDS(on) 0.28 Ω VGS = 4.0 V, ID = 5.0 A 2
Forward Transconductance gfs 3.5 S VDS = 25 V, ID = 6.0 A 2
Total Gate Charge Qg 8.4 nC VGS = 5.0 V, ID = 10 A, VDS = 48 V 2
Gate-Source Charge Qgs 3.5 nC VGS = 5.0 V, ID = 10 A, VDS = 48 V 2
Gate-Drain Charge Qgd 6 nC VGS = 5.0 V, ID = 10 A, VDS = 48 V 2
Continuous Source-Drain Diode Current IS 10 A MOSFET symbol showing the integral reverse p-n junction diode 2
Pulsed Diode Forward Current ISM 40 A MOSFET symbol showing the integral reverse p-n junction diode 2
Body Diode Voltage VSD 1.6 V TJ = 25 °C, IS = 10 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 93 130 ns TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 0.34 0.65 μC TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs 2
Drain-Source Voltage VDS 60 V TC = 25 °C 1
Gate-Source Voltage VGS -10 10 V TC = 25 °C 1
Continuous Drain Current ID 10 A VGS at 5.0 V, TC = 25 °C 1
Continuous Drain Current ID 7.2 A VGS at 5.0 V, TC = 100 °C 1
Pulsed Drain Current IDM 40 A TC = 25 °C 1
Linear Derating Factor 0.29 W/°C TC = 25 °C 1
Single Pulse Avalanche Energy EAS 39.5 mJ VDD = 25 V, starting TJ = 25 °C, L = 0.79 mH, Rg = 25 Ω, IAS = 10 A 1
Maximum Power Dissipation PD 43 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 4.5 V/ns ISD ≤ 10 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 175 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C TC = 25 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s, 1.6 mm from case 1
Mounting Torque 10 lbf · in 6-32 or M3 screw 1
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 3.5 °C/W 2
Case-to-Sink, Flat, Greased Surface RthCS 0.5 °C/W 2
VDS Temperature Coefficient ΔVDS/TJ 0.07 V/°C Reference to 25 °C, ID = 1 mA 2
Input Capacitance Ciss 400 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Output Capacitance Coss 170 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 42 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Turn-On Delay Time td(on) 9.3 ns VDD = 30 V, ID = 10 A, Rg = 12 Ω, RD = 2.8 Ω 2
Rise Time tr 110 ns VDD = 30 V, ID = 10 A, Rg = 12 Ω, RD = 2.8 Ω 2
Turn-Off Delay Time td(off) 17 ns VDD = 30 V, ID = 10 A, Rg = 12 Ω, RD = 2.8 Ω 2
Fall Time tf 26 ns VDD = 30 V, ID = 10 A, Rg = 12 Ω, RD = 2.8 Ω 2
Internal Drain Inductance LD 4.5 nH Between lead, 6 mm (0.25") from package and center of die contact 2
Internal Source Inductance LS 7.5 nH Between lead, 6 mm (0.25") from package and center of die contact 2

CAD (KiCad official)

  • Symbol: IRLZ14PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irlz14pbf-etched.step / irlz14pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlz14pbf.step / irlz14pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 0db90890c7004c3c, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF