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IRLTS6342TRPBF
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Infineon Technologies MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRLTS6342TRPBF
Infineon Technologies · MOSFETs · TSOP-6
IRLTS6342TRPBF from Infineon Technologies, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain of the N-channel HEXFET; drain-to-source voltage is rated 30 V and continuous drain current is 8.3 A at TA = 25°C. |
| 2 | D | passive | Drain of the N-channel HEXFET; drain-to-source voltage is rated 30 V and continuous drain current is 8.3 A at TA = 25°C. |
| 3 | G | input | Gate of the N-channel HEXFET; gate-to-source voltage is limited to ±12 V. |
| 4 | S | passive | Source of the N-channel HEXFET; the integral body diode runs source-to-drain with a maximum VSD of 1.2 V at IS = 8.3 A. |
| 5 | D | passive | Drain of the N-channel HEXFET; drain-to-source voltage is rated 30 V and continuous drain current is 8.3 A at TA = 25°C. |
| 6 | D | passive | Drain of the N-channel HEXFET; drain-to-source voltage is rated 30 V and continuous drain current is 8.3 A at TA = 25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 8.3 | A | @ TA = 25°C, VGS @ 4.5V | 1 | ||
| Continuous Drain Current | ID | 6.7 | A | @ TA = 70°C, VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 64 | A | Repetitive rating; pulse width limited by max. junction temperature | 1 | ||
| Power Dissipation | PD | 2 | W | @ TA = 25°C | 1 | ||
| Power Dissipation | PD | 1.3 | W | @ TA = 70°C | 1 | ||
| Linear Derating Factor | 0.02 | W/°C | 1 | ||||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250μA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 14 | 17.5 | mΩ | VGS = 4.5V, ID = 8.3A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 17.5 | 22 | mΩ | VGS = 2.5V, ID = 6.7A | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 1.1 | V | VDS = VGS, ID = 10μA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 1 | μA | VDS = 24V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 150 | μA | VDS = 24V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 12V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -12V | 2 | ||
| Forward Transconductance | gfs | 25 | S | VDS = 10V, ID = 6.4A | 2 | ||
| Continuous Source Current (Body Diode) | IS | 2 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | 64 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | TJ = 25°C, IS = 8.3A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 13 | 20 | ns | TJ = 25°C, IF = 6.4A, VDD = 24V, di/dt = 100/μs | 2 | |
| Reverse Recovery Charge | Qrr | 5.8 | 8.7 | nC | TJ = 25°C, IF = 6.4A, VDD = 24V, di/dt = 100/μs | 2 | |
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | °C/W | When mounted on 1 ich square copper board; Rθ is measured at TJ of approximately 90°C | 2 |
CAD (KiCad official)
- Symbol:
IRLTS6342TRPBF - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
irlts6342trpbf-etched.step/irlts6342trpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlts6342trpbf.step/irlts6342trpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
fae64e07ed0bbeae, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRLTS6342TRPBF
**Infineon Technologies** · MOSFETs · TSOP-6
IRLTS6342TRPBF from Infineon Technologies, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain of the N-channel HEXFET; drain-to-source voltage is rated 30 V and continuous drain current is 8.3 A at TA = 25°C. |
| 2 | D | passive | Drain of the N-channel HEXFET; drain-to-source voltage is rated 30 V and continuous drain current is 8.3 A at TA = 25°C. |
| 3 | G | input | Gate of the N-channel HEXFET; gate-to-source voltage is limited to ±12 V. |
| 4 | S | passive | Source of the N-channel HEXFET; the integral body diode runs source-to-drain with a maximum VSD of 1.2 V at IS = 8.3 A. |
| 5 | D | passive | Drain of the N-channel HEXFET; drain-to-source voltage is rated 30 V and continuous drain current is 8.3 A at TA = 25°C. |
| 6 | D | passive | Drain of the N-channel HEXFET; drain-to-source voltage is rated 30 V and continuous drain current is 8.3 A at TA = 25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-to-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | ID | | | 8.3 | A | @ TA = 25°C, VGS @ 4.5V | 1 |
| Continuous Drain Current | ID | | | 6.7 | A | @ TA = 70°C, VGS @ 4.5V | 1 |
| Pulsed Drain Current | IDM | | | 64 | A | Repetitive rating; pulse width limited by max. junction temperature | 1 |
| Power Dissipation | PD | | | 2 | W | @ TA = 25°C | 1 |
| Power Dissipation | PD | | | 1.3 | W | @ TA = 70°C | 1 |
| Linear Derating Factor | | | | 0.02 | W/°C | | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Drain-to-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS = 0V, ID = 250μA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 14 | 17.5 | mΩ | VGS = 4.5V, ID = 8.3A | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 17.5 | 22 | mΩ | VGS = 2.5V, ID = 6.7A | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 | | 1.1 | V | VDS = VGS, ID = 10μA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | μA | VDS = 24V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 150 | μA | VDS = 24V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 12V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -12V | 2 |
| Forward Transconductance | gfs | 25 | | | S | VDS = 10V, ID = 6.4A | 2 |
| Continuous Source Current (Body Diode) | IS | | | 2 | A | | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | 64 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | TJ = 25°C, IS = 8.3A, VGS = 0V | 2 |
| Reverse Recovery Time | trr | | 13 | 20 | ns | TJ = 25°C, IF = 6.4A, VDD = 24V, di/dt = 100/μs | 2 |
| Reverse Recovery Charge | Qrr | | 5.8 | 8.7 | nC | TJ = 25°C, IF = 6.4A, VDD = 24V, di/dt = 100/μs | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 62.5 | °C/W | When mounted on 1 ich square copper board; Rθ is measured at TJ of approximately 90°C | 2 |
## CAD (KiCad official)
- Symbol: `IRLTS6342TRPBF`
- Footprint: `Package_SO:TSOP-6_1.65x3.05mm_P0.95mm`
- 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files: `irlts6342trpbf-etched.step` / `irlts6342trpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irlts6342trpbf.step` / `irlts6342trpbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586203541706297344) (8 pp, sha256 `fae64e07ed0bbeae`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irlts6342trpbf-datasheet.pdf)