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IRLR8743TRPBF

Infineon Technologies · MOSFETs · TO-252

IRLR8743TRPBF from Infineon Technologies, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet gives a VGS absolute maximum of ±20V and a typical gate resistance RG of 0.85Ω (1.5Ω max).
2 D passive Drain terminal; the drain-to-source breakdown voltage BVDSS is 30V minimum and VDS is rated 30V in the absolute maximum ratings.
3 S passive Source terminal; the integral body diode has a maximum forward voltage VSD of 1.0V at IS = 20A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 2.4 3.1 mΩ VGS = 10V, ID = 25A 2
Static Drain-to-Source On-Resistance RDS(on) 3 3.9 mΩ VGS = 4.5V, ID = 20A 2
Gate Threshold Voltage VGS(th) 1.35 1.9 2.35 V VDS = VGS, ID = 100µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS = 24V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 150 µA VDS = 24V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 89 S VDS = 15V, ID = 20A 2
Total Gate Charge Qg 39 59 nC VGS = 4.5V, ID = 20A, VDS = 15V 2
Gate Resistance RG 0.85 1.5 Ω 2
Diode Forward Voltage VSD 1 V TJ = 25°C, IS = 20A, VGS = 0V 2
Reverse Recovery Time trr 18 27 ns TJ = 25°C, IF = 20A, VDD = 15V, di/dt = 300A/µs 2
Reverse Recovery Charge Qrr 32 48 nC TJ = 25°C, IF = 20A, VDD = 15V, di/dt = 300A/µs 2
Avalanche Current IAR 20 A 2
Drain-to-Source Voltage VDS 30 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current, VGS @ 10V ID 160 A TC = 25°C 1
Continuous Drain Current, VGS @ 10V ID 113 A TC = 100°C 1
Pulsed Drain Current IDM 640 A 1
Maximum Power Dissipation PD 135 W TC = 25°C 1
Maximum Power Dissipation PD 68 W TC = 100°C 1
Linear Derating Factor 0.9 W/°C 1
Operating Junction Temperature TJ -55 175 °C 1
Storage Temperature Range TSTG -55 175 °C 1
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 1
Junction-to-Case Thermal Resistance RθJC 1.11 °C/W 1
Junction-to-Ambient Thermal Resistance (PCB Mount) RθJA 50 °C/W PCB mount 1
Junction-to-Ambient Thermal Resistance RθJA 110 °C/W 1

CAD (KiCad official)

  • Symbol: IRLR8743TRPBF
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: irlr8743trpbf-etched.step / irlr8743trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlr8743trpbf.step / irlr8743trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 75e8c7db9b161bb3, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF