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Ray Publish 0.1.0 e5341fb 17d ago

IRLR8726TR

UMW · MOSFETs · TO-252

IRLR8726TR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-to-source voltage is rated VGS ±20 V.
2 D passive Drain terminal; VDS is 30 V, with continuous drain current of 86 A at TC=25°C, and the package limits current to 50 A (note ④).
3 S passive Source terminal; body diode is rated at 86 A continuous source current (IS) and 340 A pulsed source current (ISM).

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 3
Gate Threshold Voltage VGS(th) 1.35 2.35 V VDS=VGS, ID=50μA 3
Static Drain-to-Source On-Resistance RDS(ON) 5.8 mΩ VGS=10V, ID=25A 3
Static Drain-to-Source On-Resistance RDS(ON) 8 mΩ VGS=4.5V, ID=20A 3
Drain-to-Source Leakage Current IDSS 1 µA VDS=24V, VGS=0V 3
Drain-to-Source Leakage Current IDSS 150 µA VDS=24V, VGS=0V, TJ=125°C 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 3
Continuous Source Current (Body Diode) IS 86 A TJ=25°C, IS=20A, VGS=0V 4
Diode Forward Voltage VSD 1 V TJ=25°C, IS=20A, VGS=0V 4
Reverse Recovery Time trr 24 36 ns TJ=25°C, IF=20A, VDD=15V, dI/dt=300A/μs 4
Reverse Recovery Charge Qrr 52 78 nC TJ=25°C, IF=20A, VDD=15V, dI/dt=300A/μs 4
Single Pulse Avalanche Energy EAS 120 mJ Starting TJ=25°C, L=10.605mH, RG=25Ω, IAS=-20A 4
Avalanche Current IAR 20 A 4
Gate-to-Source Voltage VGS -20 20 V 1
Drain-Source Voltage VDS 30 V 1
Continuous Drain Current ID 86 A VGS=10V, TC=25°C 1
Continuous Drain Current ID 61 A VGS=10V, TC=100°C 1
Pulsed Drain Current IDM 340 A 1
Maximum Power Dissipation PD 75 W TC=25°C 1
Maximum Power Dissipation PD 38 W TC=100°C 1
Linear Derating Factor 0.5 W/°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Soldering Temperature, for 10 seconds 300 °C 1.6mm from case, 10 seconds 1
Junction-to-Case RθJC 2 °C/W 2
Junction-to-Ambient (PCB Mounted) RθJA 50 °C/W PCB mounted, 1" square PCB (FR-4 or G-10) 2
Junction-to-Ambient RθJA 110 °C/W 2

CAD (KiCad official)

  • Symbol: IRLR8726TR
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: irlr8726tr-etched.step / irlr8726tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlr8726tr.step / irlr8726tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (11 pp, sha256 76a7e191747eebec, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF