component

IRLR8726T

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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irlr8726t-hero.glb irlr8726t: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
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IRLR8726T

HXY MOSFET · MOSFETs · TO-252-2L

IRLR8726T from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet limits VGS to ±20 V (absolute maximum) and specifies VGS(th) of 1 V min, 1.6 V typ, 2.5 V max at VGS=VDS, ID=250 uA.
2 D passive Drain terminal; the datasheet rates VDS at 30 V and continuous drain current ID at 80 A (TC=25℃), with 320 A pulsed.
3 S passive Source terminal; the reference for VGS, with continuous source current IS rated at 80 A and pulsed source current ISM at 320 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current, Continuous (TC=25℃) ID 80 A TC=25℃ 1
Drain Current, Continuous (TC=100℃) ID 51 A TC=100℃ 1
Drain Current, Pulsed IDM 320 A 1
Single Pulse Avalanche Energy EAS 88 mJ 1
Single Pulse Avalanche Current IAS 42 A 1
Power Dissipation (TC=25℃) PD 54 W TC=25℃ 1
Power Dissipation, Derate above 25℃ PD 0.43 W/℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction to ambient RθJA 62 ℃/W 1
Thermal Resistance Junction to Case RθJC 2.3 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V , ID=250uA 2
Drain-Source Leakage Current (TJ=25℃) IDSS 1 uA VDS=30V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current (TJ=125℃) IDSS 10 uA VDS=24V , VGS=0V , TJ=125℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Static Drain-Source On-Resistance RDS(ON) 5 6.8 mΩ VGS=10V , ID=20A 2
Static Drain-Source On-Resistance RDS(ON) 6.5 9 mΩ VGS=4.5V , ID=10A 2
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VGS=VDS , ID=250uA 2
Single Pulse Avalanche Energy EAS 20 mJ VDD=25V, L=0.1mH, IAS=20A 2
Continuous Source Current IS 80 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 320 A 2
Diode Forward Voltage VSD 1 V VGS=0V , IS=1A , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: IRLR8726T
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: irlr8726t-etched.step / irlr8726t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlr8726t.step / irlr8726t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 e172ac8fb4822915, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF