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Contents

README

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IRLR7843TRPBF-HXY

HXY MOSFET · MOSFETs · TO-252-2L

IRLR7843TRPBF-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±20 V (absolute maximum).
2 D passive Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 30 V (VDS).
3 S passive Source terminal of the N-channel MOSFET; it is the reference for the gate-source voltage and the drain-source ratings.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, IDS=250mA 2
Zero Gate Voltage Drain Current IDSS 1 mA VDS=24V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 30 mA TJ=85°C 2
Gate Threshold Voltage VGS(th) 1.4 1.7 2.5 V VDS=VGS, IDS=250mA 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Drain-Source On-state Resistance RDS(ON) 3 3.8 mW VGS=10V, IDS=20A 2
Drain-Source On-state Resistance RDS(ON) 4.4 mW TJ=125°C 2
Drain-Source On-state Resistance RDS(ON) 4 5.5 mW VGS=4.5V, IDS=15A 2
Diode Forward Voltage VSD 0.8 1.1 V ISD=20A, VGS=0V 2
Gate Resistance RG 1 2 W VGS=0V, VDS=0V, F=1MHz 2
Input Capacitance Ciss 2485 2971 pF VGS=0V, VDS=15V, Frequency=1.0MHz 2
Turn-on Delay Time td(ON) 12.4 23 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 2
Turn-on Rise Time tr 9.5 18 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 2
Turn-off Delay Time td(OFF) 27.2 49 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 2
Turn-off Fall Time tf 35.2 64 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 2
Total Gate Charge Qg 20.6 28.8 nC VDS=15V, VGS=10V, IDS=20A 2
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V Printed as ±20 V 1
Pulsed Drain Current IDM 384 A 1
Single Pulse Avalanche Energy EAS 196 mJ 1
Avalanche Current IAS 53.8 A 1
Total Power Dissipation PD 62.5 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Ambient (chart annotation) RqJA 64 ℃/W Mounted on 1in2 pad 4
Thermal Resistance Junction-Case (chart annotation) RqJC 2.2 ℃/W Thermal transient impedance chart 3

CAD (KiCad official)

  • Symbol: IRLR7843TRPBF-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: irlr7843trpbf-hxy-etched.step / irlr7843trpbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlr7843trpbf-hxy.step / irlr7843trpbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (8 pp, sha256 6b511e2e22514c0b, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF