# IRLR3915PBF-HXY

**HXY MOSFET** · MOSFETs · TO-252-2L

IRLR3915PBF-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; gate-source voltage rated ±20 V, with RDS(ON) specified at VGS=10V and 4.5V and threshold 1.2 to 2.5 V. |
| 2 | D | passive | Drain of the N-channel MOSFET; VDS rated 60 V, continuous drain current 50 A at TC=25℃ (also connected to the tab). |
| 3 | S | passive | Source of the N-channel MOSFET; continuous source current (body diode) up to 35 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 11 | 15 | mΩ | VGS=10V, ID=20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 15 | 20 | mΩ | VGS=4.5V, ID=10A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 |  | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=48V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=48V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Continuous Source Current | IS |  |  | 35 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM |  |  | 80 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage | VSD |  |  | 1 | V | VGS=0V, IS=A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS |  |  | 60 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TC=25℃ | 1 |
| Continuous Drain Current | ID@TC=25℃ |  |  | 50 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TC=100℃ |  |  | 25 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 90 | A | TC=25℃ | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 39.2 | mJ | VDD=25V, VGS=10V, L=0.1mH, IAS=28A | 1 |
| Avalanche Current | IAS |  |  | 28 | A | TC=25℃ | 1 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 45 | W |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 62 | ℃/W |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 2.8 | ℃/W |  | 1 |
| BVDSS Temperature Coefficient | △BVDSS/△TJ |  | 0.057 |  | V/℃ | Reference to 25℃, ID=1mA | 2 |
| VGS(th) Temperature Coefficient | △VGS(th) |  | -5.68 |  | mV/℃ |  | 2 |
| Forward Transconductance | gfs |  | 45 |  | S | VDS=5V, ID=15A | 2 |
| Gate Resistance | Rg |  | 1.7 |  | Ω | VDS=0V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge (4.5V) | Qg |  | 19.3 |  | nC | VDS=48V, VGS=4.5V, ID=15A | 2 |
| Gate-Source Charge | Qgs |  | 7.1 |  | nC | VDS=48V, VGS=4.5V, ID=15A | 2 |
| Gate-Drain Charge | Qgd |  | 7.6 |  | nC | VDS=48V, VGS=4.5V, ID=15A | 2 |
| Turn-On Delay Time | Td(on) |  | 7.2 |  | ns | VDD=30V, VGS=10V, RG=3.3, ID=15A | 2 |
| Rise Time | Tr |  | 50 |  | ns | VDD=30V, VGS=10V, RG=3.3, ID=15A | 2 |
| Turn-Off Delay Time | Td(off) |  | 36.4 |  | ns | VDD=30V, VGS=10V, RG=3.3, ID=15A | 2 |
| Fall Time | Tf |  | 7.6 |  | ns | VDD=30V, VGS=10V, RG=3.3, ID=15A | 2 |
| Input Capacitance | Ciss |  | 2423 |  | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 145 |  | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 97 |  | pF | VDS=15V, VGS=0V, f=1MHz | 2 |
| Reverse Recovery Time | trr |  | 16.3 |  | nS | IF=15A, dI/dt=100A/µs, TJ=25℃ | 2 |
| Reverse Recovery Charge | Qrr |  | 11 |  | nC | IF=15A, dI/dt=100A/µs, TJ=25℃ | 2 |

## CAD (KiCad official)

- Symbol: `IRLR3915PBF-HXY`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `irlr3915pbf-hxy-etched.step` / `irlr3915pbf-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irlr3915pbf-hxy.step` / `irlr3915pbf-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/irlr3915pbf-hxy-datasheet.pdf) (6 pp, sha256 `6fa5a6ed0f8845ad`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irlr3915pbf-hxy-datasheet.pdf)