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IRLR3636PBF-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRLR3636PBF-HXY

HXY MOSFET · MOSFETs · TO-252-2L

IRLR3636PBF-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet rates gate-source voltage VGS at ±20 V and states operation with gate voltages as low as 4.5 V.
2 D passive Drain terminal; the datasheet rates drain-source voltage VDS at 60 V and continuous drain current ID at 80 A.
3 S passive Source terminal; the datasheet gives no separate limit for this pin beyond the 60 V VDS and ±20 V VGS absolute maximum ratings.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 80 A ID@TC=25℃, VGS @ 10V 1
Continuous Drain Current ID 40 A ID@TC=100℃, VGS @ 10V 1
Pulsed Drain Current IDM 255 A 1
Avalanche Current IAS 23 A 1
Total Power Dissipation PD 100 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 6 8.3 mΩ VGS=10V, ID=45A 2
Static Drain-Source On-Resistance RDS(ON) 17 mΩ VGS=6V, ID=30A 2
Gate Threshold Voltage VGS(th) 1 1.4 3 V VDS=VGS, ID=250uA 2
Drain-Source Leakage Current IDSS 10 uA VDS=60V, VGS=0V 2
Drain-Source Leakage Current (Tj=125oC) IDSS 250 uA Tj=125oC, VDS=48V, VGS=0V 2
Gate-Source Leakage IGSS 100 nA VGS=+20V, VDS=0V 2
Total Gate Charge Qg 33 45 nC ID=30A, VDS=48V, VGS=4.5V 2
Input Capacitance Ciss 2680 3300 pF VGS=0V, VDS=25V, f=1.0MHz 2
Forward On Voltage VSD 1.3 V IS=45A, VGS=0V 2

CAD (KiCad official)

  • Symbol: IRLR3636PBF-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: irlr3636pbf-hxy-etched.step / irlr3636pbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlr3636pbf-hxy.step / irlr3636pbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 5c3dd751d50dfae0, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF