component
IRLR3410TRPBF
Public Made by Adomby adom
ElecSuper MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRLR3410TRPBF
ElecSuper · MOSFETs · TO-252
IRLR3410TRPBF from ElecSuper, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel enhancement MOSFET; the absolute maximum gate-source voltage is ±20 V. |
| 2 | Drain | passive | Drain terminal of the MOSFET; the datasheet rates the drain-source voltage at 100 V (BVDSS) and the continuous drain current at 15 A at TC=25°C. |
| 3 | Source | passive | Source terminal of the MOSFET; the datasheet gives no source-specific electrical limit. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ElecSuper |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 15 | A | TC=25°C | 2 | ||
| Continuous Drain Current | ID | 9 | A | TC=75°C | 2 | ||
| Maximum Power Dissipation | PD | 46 | W | 2 | |||
| Pulsed Drain Current | IDM | 60 | A | 2 | |||
| Operating Junction Temperature | TJ | 150 | °C | 2 | |||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Drain-Source Voltage | BVDSS | 100 | V | 2 | |||
| Junction-to-Case Thermal Resistance | RθJC | 2.7 | °C/W | Single Operation | 2 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=100V, VGS=0V | 3 | ||
| Gate-to-source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Gate Threshold Voltage | VGS(TH) | 1.2 | 1.8 | 2.4 | V | VGS=VDS, ID=250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | 80 | 100 | mΩ | VGS=10V, ID=10A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 90 | 115 | mΩ | VGS=4.5V, ID=8A | 3 | |
| Forward Voltage | VSD | 1.5 | V | VGS=0V, IS=10A | 3 |
CAD (KiCad official)
- Symbol:
IRLR3410TRPBF - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
irlr3410trpbf-etched.step/irlr3410trpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlr3410trpbf.step/irlr3410trpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ElecSuper datasheet (9 pp, sha256
80e45b450d41eadc, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).