# IRLR2705PBF-HXY

**HXY MOSFET** · MOSFETs · TO-252-2L

IRLR2705PBF-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate threshold VGS(th) is 1.2 V min, 1.7 V typ, 2.5 V max at VDS = VGS, ID = 250µA, and gate-source voltage is rated ±20 V. |
| 2 | D | passive | Drain-source voltage is rated 60 V, and continuous drain current is rated 20 A at TC=25℃ with VGS @ 10V. |
| 3 | S | passive | Continuous source current IS is rated 20 A at TC=25°C, with body diode forward voltage VSD of 1.2 V max at IS = 10A, VGS = 0V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TC=25℃ |  |  | 20 | A | VGS @ 10V, TC=25℃ | 1 |
| Continuous Drain Current | ID@TC=100℃ |  |  | 10 | A | VGS @ 10V, TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 80 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 38 | mJ | Note 2: VDD=25V, VGS=10V, L=0.4mH, IAS=14A | 1 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 34.7 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | TJ=25°C; VDS = 60V, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 100 | μA | TJ=100°C; VDS = 60V, VGS = 0V | 2 |
| Gate-Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source on-Resistance | RDS(on) |  | 25 | 32 | mΩ | VGS = 10V, ID = 10A | 2 |
| Drain-Source on-Resistance | RDS(on) |  | 31.5 | 40 | mΩ | VGS = 4.5V, ID = 5A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | IS = 10A, VGS = 0V | 2 |
| Continuous Source Current | IS |  |  | 20 | A | TC=25°C | 2 |

## CAD (KiCad official)

- Symbol: `IRLR2705PBF-HXY`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `irlr2705pbf-hxy-etched.step` / `irlr2705pbf-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irlr2705pbf-hxy.step` / `irlr2705pbf-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758123018281869312) (6 pp, sha256 `f8d54392076e66a5`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irlr2705pbf-hxy-datasheet.pdf)