component

IRLR120PBF-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsirlr120pbf-vbfactory-2.0.0extractor-text

Verified IRLR120PBF-VB

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IRLR120PBF-VB · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-iyqtq4mm/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.5)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ irlr120pbf-vb.kicad_sym✓ irlr120pbf-vb.kicad_mod✓ irlr120pbf-vb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers irlr120pbf-vb: viewers · Ray 7d ago
irlr120pbf-vb-etched.glb Publish 0.1.0 · Ray 7d ago
irlr120pbf-vb-etched.step irlr120pbf-vb: factory component page (tier=lcsc) · Ray 7d ago
irlr120pbf-vb-hero.glb irlr120pbf-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
irlr120pbf-vb-hero.overlay.json Publish 0.1.0 · Ray 7d ago
irlr120pbf-vb.glb Publish 0.1.0 · Ray 7d ago
irlr120pbf-vb.kicad_mod Publish 0.1.0 · Ray 7d ago
irlr120pbf-vb.kicad_sym Publish 0.1.0 · Ray 7d ago
irlr120pbf-vb.lbr Publish 0.1.0 · Ray 7d ago
irlr120pbf-vb.step Publish 0.1.0 · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 7d ago

IRLR120PBF-VB

VBsemi Elec · MOSFETs · TO-252

IRLR120PBF-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with gate-source voltage limited to ±20 V in the absolute maximum ratings.
2 D passive Drain of the MOSFET, rated for a drain-source voltage of 100 V, and also the drain connection to the case (Junction-to-Case (Drain) rating).
3 S passive Source of the MOSFET, with continuous source (diode conduction) current limited to 3 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 13 A TJ = 175 °C, TC = 125 °C 1
Pulsed Drain Current IDM 40 A 1
Continuous Source Current (Diode Conduction) IS 3 A 1
Avalanche Current IAS 3 A 1
Single Pulse Avalanche Energy EAS 18 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 96 W TC = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient (t 10 s) RthJA 15 18 °C/W t 10 s; surface mounted on 1" x 1" FR4 board 1
Junction-to-Ambient (Steady State) RthJA 40 50 °C/W Steady state; surface mounted on 1" x 1" FR4 board 1
Junction-to-Case (Drain) RthJC 0.85 1.1 °C/W 1
Drain-Source Breakdown Voltage VDS 100 V VGS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 100 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 40 A VDS = 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.14 Ω VGS = 10 V, ID = 3 A, TJ = 175 °C 2
Total Gate Charge Qg 24 41 nC VDS = 50 V, VGS = 10 V, ID = 3 A 2
Gate Resistance Rg 0.5 2.9 Ω 2
Rise Time tr 50 75 ns VDD = 50 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 30 45 ns VDD = 50 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2
Fall Time tf 60 90 ns VDD = 50 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 2
Pulsed Current ISM 5 A 2
Diode Forward Voltage VSD 0.9 1.5 V IF = 3 A, VGS = 0 V 2
Source-Drain Reverse Recovery Time trr 180 250 ns IF = 3 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: IRLR120PBF-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: irlr120pbf-vb-etched.step / irlr120pbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlr120pbf-vb.step / irlr120pbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 bcae9e33ef140337, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF