component
IRLR120NTR
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRLR120NTR
UMW · MOSFETs · TO-252
IRLR120NTR from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal; the datasheet gives gate-to-source ratings of ±16 V (VGS) in the absolute maximum ratings. |
| 2 | D | passive | DRAIN terminal, which is also the tab; the device is rated for VDS = 100 V and continuous drain current ID of 10 A at TC = 25°C. |
| 3 | S | passive | SOURCE terminal; the body diode continuous source current IS is rated at 10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current | ID | 10 | A | TC=25°C, VGS=10V | 1 | ||
| Continuous Drain Current | ID | 7 | A | TC=100°C, VGS=10V | 1 | ||
| Pulsed Drain Current | IDM | 35 | A | 1 | |||
| Power Dissipation | PD | 48 | W | TC=25°C | 1 | ||
| Linear Derating Factor | 0.32 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -16 | 16 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 85 | mJ | Note 2: VDD=25V, starting TJ=25°C, L=4.7mH, RG=25Ω, IAS=6A | 1 | ||
| Avalanche Current | IAR | 6 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 4.8 | mJ | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | Note 3: ISD ≤ 6.0A, di/dt ≤340A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature, for 10 seconds | 300 | °C | 1.6mm from case | 1 | |||
| Junction-to-Case | RθJC | 3.1 | °C/W | 2 | |||
| Junction-to-Ambient (PCB Mount) | RθJA | 50 | °C/W | PCB mount | 2 | ||
| Junction-to-Ambient | RθJA | 110 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | ID=250µA, VGS=0V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2 | V | VDS=VGS, ID=250µA | 3 | |
| Forward Transconductance | gFS | 3.1 | S | VDS=25V, ID=6A ⑥ | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 185 | mΩ | VGS=10V, ID=6A ④ | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 225 | mΩ | VGS=5V, ID=6A ④ | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 265 | mΩ | VGS=4V, ID=5A ④ | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 25 | µA | VDS=100V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 250 | µA | VDS=80V, VGS=0V, TJ=150°C | 3 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=16V | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-16V | 3 | ||
| Continuous Source Current (Body Diode) | IS | 10 | A | 4 | |||
| Pulsed Source Current (Body Diode) | ISM | 35 | A | 4 | |||
| Diode Forward Voltage | VSD | 1.3 | V | TJ=25°C, IS=6A, VGS=0V ④ | 4 | ||
| Reverse Recovery Time | trr | 110 | 160 | ns | TJ=25°C, IF=6A, dI/dt=100A/µs ④ ⑥ | 4 | |
| Reverse Recovery Charge | Qrr | 410 | 620 | nC | TJ=25°C, IF=6A, dI/dt=100A/µs ④ ⑥ | 4 | |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/TJ | 0.12 | V/°C | ID=1mA, reference to 25°C | 3 | ||
| Total Gate Charge | Qg | 20 | nC | ID=6A | 3 | ||
| Gate-to-Source Charge | Qgs | 4.6 | nC | VDS=80V, VGS=5V | 3 | ||
| Gate-to-Drain (Miller) Charge | Qgd | 10 | nC | See Fig. 6 and 13 ④⑥ | 3 | ||
| Turn-On Delay Time | tD(on) | 4 | ns | VDD=50V, ID=6A, RG=11Ω, VGS=5V, RD=8.2Ω, See Fig. 10 ④⑥ | 3 | ||
| Rise Time | tr | 35 | ns | VDD=50V, ID=6A, RG=11Ω, VGS=5V, RD=8.2Ω, See Fig. 10 ④⑥ | 3 | ||
| Turn-Off Delay Time | tD(off) | 23 | ns | VDD=50V, ID=6A, RG=11Ω, VGS=5V, RD=8.2Ω, See Fig. 10 ④⑥ | 3 | ||
| Fall Time | tf | 22 | ns | VDD=50V, ID=6A, RG=11Ω, VGS=5V, RD=8.2Ω, See Fig. 10 ④⑥ | 3 | ||
| Input Capacitance | Ciss | 440 | pF | VGS=0V, VDS=25V, f = 1.0MHz, See Fig. 5 ⑥ | 3 | ||
| Output Capacitance | Coss | 97 | pF | VGS=0V, VDS=25V, f = 1.0MHz, See Fig. 5 ⑥ | 3 | ||
| Reverse Transfer Capacitance | Crss | 50 | pF | VGS=0V, VDS=25V, f = 1.0MHz, See Fig. 5 ⑥ | 3 | ||
| Internal Drain Inductance | LD | 4.5 | nH | Between lead, 6mm (0.25in.) from package and center of die contact ⑤ | 3 | ||
| Internal Source Inductance | LS | 7.5 | nH | Between lead, 6mm (0.25in.) from package and center of die contact ⑤ | 3 |
CAD (KiCad official)
- Symbol:
IRLR120NTR - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
irlr120ntr-etched.step/irlr120ntr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlr120ntr.step/irlr120ntr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (11 pp, sha256
815016872d292617, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).