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IRLR120NPBF-HXY

HXY MOSFET · MOSFETs · TO-252-2L

IRLR120NPBF-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the datasheet gives a gate-source voltage rating of ±20 V.
2 D passive Drain terminal; rated 100 V drain-source with 15 A continuous drain current at TC=25℃ (VGS=10V).
3 S passive Source terminal; the datasheet specifies 12 A continuous source current and 24 A pulsed source current for the body diode.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 100 112 mΩ VGS=10V, ID=10A 2
Static Drain-Source On-Resistance RDS(ON) 117 130 mΩ VGS=4.5V, ID=8A 2
Gate Threshold Voltage VGS(th) 1 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=80V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=80V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 12 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 24 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V printed as ±20 1
Continuous Drain Current ID@TC=25℃ 15 A TC=25℃, VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 7.7 A TC=100℃, VGS @ 10V 1
Pulsed Drain Current IDM 24 A 1
Single Pulse Avalanche Energy EAS 6.1 mJ 1
Avalanche Current IAS 11 A 1
Total Power Dissipation PD@TC=25℃ 34.7 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 3.6 ℃/W 1

CAD (KiCad official)

  • Symbol: IRLR120NPBF-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: irlr120npbf-hxy-etched.step / irlr120npbf-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlr120npbf-hxy.step / irlr120npbf-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 66e90126f295a97b, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF