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Ray Publish 0.1.0 7067b6e 5h ago

IRLMS6802TRPBF

Infineon Technologies · MOSFETs · SOT-23-6L

IRLMS6802TRPBF from Infineon Technologies, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal; the absolute maximum drain-to-source voltage is -20 V and continuous drain current is -5.6 A at TA = 25°C with VGS = -4.5 V.
2 D passive Drain terminal; the absolute maximum drain-to-source voltage is -20 V and continuous drain current is -5.6 A at TA = 25°C with VGS = -4.5 V.
3 G input Gate terminal; the gate-to-source voltage is rated ±12 V, and the gate threshold voltage is -0.60 V minimum to -1.2 V maximum.
4 S passive Source terminal; the body diode forward voltage is -1.2 V maximum at IS = -1.6 A and VGS = 0 V, TJ = 25°C.
5 D passive Drain terminal; the absolute maximum drain-to-source voltage is -20 V and continuous drain current is -5.6 A at TA = 25°C with VGS = -4.5 V.
6 D passive Drain terminal; the absolute maximum drain-to-source voltage is -20 V and continuous drain current is -5.6 A at TA = 25°C with VGS = -4.5 V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23-6L
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 1
Continuous Drain Current at TA=25°C ID -5.6 A VGS @ -4.5V 1
Continuous Drain Current at TA=70°C ID -4.5 A VGS @ -4.5V 1
Pulsed Drain Current IDM -45 A 1
Power Dissipation at TA=25°C PD 2 W 1
Power Dissipation at TA=70°C PD 1.3 W 1
Linear Derating Factor 0.016 W/°C 1
Single Pulse Avalanche Energy EAS 31 mJ 1
Gate-to-Source Voltage VGS -12 12 V 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient Thermal Resistance RθJA 62.5 °C/W Maximum Junction-to-Ambient 1
Drain-to-Source Breakdown Voltage V(BR)DSS -20 V VGS = 0V, ID = -250µA 2
Static Drain-to-Source On-Resistance RDS(on) 0.05 Ω VGS = -4.5V, ID = -5.1A 2
Static Drain-to-Source On-Resistance RDS(on) 0.1 Ω VGS = -2.5V, ID = -3.4A 2
Gate Threshold Voltage VGS(th) -0.6 -1.2 V VDS = VGS, ID = -250µA 2
Forward Transconductance gfs 1.5 S VDS = -10V, ID = -0.80A 2
Drain-to-Source Leakage Current IDSS -1 VDS = -16V, VGS = 0V 2
Drain-to-Source Leakage Current at TJ=125°C IDSS -25 VDS = -16V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage -100 VGS = -12V 2
Gate-to-Source Reverse Leakage 100 VGS = 12V 2
Total Gate Charge Qg 16 nC ID = -4.5A 2
Gate-to-Source Charge Qgs 3.3 nC VDS = -10V 2
Gate-to-Drain (Miller) Charge Qgd 4.3 nC VGS = -5.0V 2
Diode Forward Voltage VSD -1.2 V TJ = 25°C, IS = -1.6A, VGS = 0V 2
Reverse Recovery Time trr 110 ns TJ = 25°C, IF = -3.0A 2
Reverse Recovery Charge Qrr 67 nC di/dt = -100A/µs 2

CAD (KiCad official)

  • Symbol: IRLMS6802TRPBF
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: irlms6802trpbf-etched.step / irlms6802trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlms6802trpbf.step / irlms6802trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (7 pp, sha256 e1f9c9baa41c7064, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF