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Ray Publish 0.1.0 b223809 12d ago

IRLML6402TRPBF-ES

ElecSuper · MOSFETs · SOT-23

IRLML6402TRPBF-ES from ElecSuper, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the P-channel MOSFET; the datasheet rates gate-source voltage VGS at ±12 V and gate-source leakage IGSS at ±100 nA with VGS=±12 V.
2 Source passive Source of the P-channel MOSFET; the datasheet gives a body diode forward voltage VSD of -1.5 V at IS=-2A with VGS=0V.
3 Drain passive Drain of the P-channel MOSFET; the datasheet rates drain-source voltage BVDSS at -20 V and continuous drain current ID at -3.3 A at TA=25°C.

Key specifications

Parameter Value
Manufacturer ElecSuper
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS -20 V 2
Gate-Source Voltage VGS -12 12 V 2
Continuous Drain Current ID -3.3 A TA=25°C 2
Continuous Drain Current ID -2.1 A TA=100°C 2
Maximum Power Dissipation PD 0.9 W TA=25°C 2
Pulsed Drain Current IDM -13.4 A 2
Operating Junction Temperature TJ 150 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction-to-Ambient Thermal Resistance RθJA 139 °C/W t ≤ 10s 2
Drain-to-Source Breakdown Voltage BVDSS -20 V VGS=0V, ID=-250uA 3
Zero Gate Voltage Drain Current IDSS -1 uA VDS=-20V, VGS=0V 3
Gate-to-source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±12V 3
Gate Threshold Voltage VGS(TH) -0.4 -0.62 -1 V VGS=VDS, ID=-250uA 3
Drain-to-source On-resistance RDS(on) 36 47 mΩ VGS=-4.5V, ID=-2A 3
Drain-to-source On-resistance RDS(on) 50 63 mΩ VGS=-2.5V, ID=-1.5A 3
Input Capacitance CISS 475 pF VGS=0V, VDS=-10V, f=1MHz 3
Output Capacitance COSS 60 pF VGS=0V, VDS=-10V, f=1MHz 3
Reverse Transfer Capacitance CRSS 50 pF VGS=0V, VDS=-10V, f=1MHz 3
Total Gate Charge QG 4.3 nC VGS=-4.5V, VDS=-10V, ID=-2A 3
Gate-to-Source Charge QGS 0.8 nC VGS=-4.5V, VDS=-10V, ID=-2A 3
Gate-to-Drain Charge QGD 1.1 nC VGS=-4.5V, VDS=-10V, ID=-2A 3
Turn-On Delay Time td(ON) 12 ns VGS=-4.5V, VDS=-10V, ID=-2A, RG=3Ω 3
Rise Time tr 55 ns VGS=-4.5V, VDS=-10V, ID=-2A, RG=3Ω 3
Turn-Off Delay Time td(OFF) 15 ns VGS=-4.5V, VDS=-10V, ID=-2A, RG=3Ω 3
Fall Time tf 9 ns VGS=-4.5V, VDS=-10V, ID=-2A, RG=3Ω 3
Forward Voltage VSD -1.5 V VGS=0V, IS=-2A 3

CAD (KiCad official)

  • Symbol: IRLML6402TRPBF-ES
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: irlml6402trpbf-es-etched.step / irlml6402trpbf-es-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlml6402trpbf-es.step / irlml6402trpbf-es.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ElecSuper datasheet (6 pp, sha256 2911ed7adb1c77ef, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF