component
IRLML6401
Public Made by Adomby adom
KEXIN MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 24d ago |
| viewers | 24d ago |
| irlml6401-etched.glb | 24d ago |
| irlml6401-etched.step | 24d ago |
| irlml6401-hero.glb | 24d ago |
| irlml6401-hero.overlay.json | 24d ago |
| irlml6401.glb | 24d ago |
| irlml6401.kicad_mod | 24d ago |
| irlml6401.kicad_sym | 24d ago |
| irlml6401.lbr | 24d ago |
| irlml6401.step | 24d ago |
| package.json | 24d ago |
| page.json | 17d ago |
| README.md | 17d ago |
IRLML6401
KEXIN · MOSFETs · SOT-23
IRLML6401 from KEXIN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel enhancement MOSFET; the datasheet limits the gate-source voltage VGS to ±8 V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET, the reference for VGS; the datasheet gives the drain-source voltage rating VDS of -12 V measured against this pin. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; the datasheet rates it for a drain-source voltage of -12 V and a continuous drain current of -4.3 A at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KEXIN |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -12 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | -4.3 | A | VGS=4.5V @ TA=25℃ | 1 | ||
| Continuous Drain Current | ID | -3.4 | A | VGS=4.5V @ TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | -34 | A | Repetitive rating, note a | 1 | ||
| Power Dissipation | PD | 1.3 | W | TA=25℃ | 1 | ||
| Power Dissipation | PD | 0.8 | W | TA=70℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 33 | mJ | Note b: TJ=25℃, L=3.5mH, RG=25Ω, IAS=-4.3A | 1 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 100 | ℃/W | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Junction and Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | VDSS | -12 | V | ID=-250μA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-12V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -25 | μA | VDS=-9.6V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±8V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.55 | -0.95 | V | VDS=VGS, ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 50 | mΩ | VGS=-4.5V, ID=-4.3A | 2 | ||
| Static Drain-Source On-Resistance | RDS(on) | 85 | mΩ | VGS=-2.5V, ID=-2.5A | 2 | ||
| Static Drain-Source On-Resistance | RDS(on) | 125 | mΩ | VGS=-1.8V, ID=-2A | 2 | ||
| Forward Transconductance | gFS | 8.6 | S | VDS=-10V, ID=-4.3A | 2 | ||
| Input Capacitance | Ciss | 830 | pF | VGS=0V, VDS=-10V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 180 | pF | VGS=0V, VDS=-10V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 125 | pF | VGS=0V, VDS=-10V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 10 | 15 | nC | VGS=-5.0V, VDS=-10V, ID=-4.3A | 2 | |
| Gate Source Charge | Qgs | 1.4 | 2.1 | nC | VGS=-5.0V, VDS=-10V, ID=-4.3A | 2 | |
| Gate Drain Charge | Qgd | 2.6 | 3.9 | nC | VGS=-5.0V, VDS=-10V, ID=-4.3A | 2 | |
| Turn-On Delay Time | td(on) | 11 | ns | ID=-1.0A, VDS=-6.0V, RL=6Ω, RGEN=89Ω | 2 | ||
| Turn-On Rise Time | tr | 32 | ns | ID=-1.0A, VDS=-6.0V, RL=6Ω, RGEN=89Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 250 | ns | ID=-1.0A, VDS=-6.0V, RL=6Ω, RGEN=89Ω | 2 | ||
| Turn-Off Fall Time | tf | 210 | ns | ID=-1.0A, VDS=-6.0V, RL=6Ω, RGEN=89Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 22 | 33 | ns | IF=-1.3A, dI/dt=-100A/μs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 8 | 12 | nC | IF=-1.3A, dI/dt=-100A/μs | 2 | |
| Maximum Body-Diode Continuous Current | IS | 1.3 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | IS=-1.3A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
IRLML6401 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
irlml6401-etched.step/irlml6401-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlml6401.step/irlml6401.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KEXIN datasheet (6 pp, sha256
2f1511cfd365252c, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).