component
IRLML6346TRPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
IRLML6346TRPBF
Infineon Technologies · MOSFETs · SOT-23
IRLML6346TRPBF from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; VGS max ±12 V, with threshold 0.5 to 1.1 V (typ. 0.8 V) at VDS = VGS, ID = 10 µA. |
| 2 | S | passive | Source; body diode continuous source current is 1.3 A max and pulsed source current is 17 A. |
| 3 | D | passive | Drain; VDS max 30 V, continuous drain current 3.4 A at TA = 25°C, pulsed drain current 17 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS = 0V, ID = 250μA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 46 | 63 | mΩ | VGS = 4.5V, ID = 3.4A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 59 | 80 | mΩ | VGS = 2.5V, ID = 2.7A | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.8 | 1.1 | V | VDS = VGS, ID = 10μA | 2 |
| Drain-to-Source Leakage Current | IDSS | 1 | μA | VDS = 24V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current (TJ = 125°C) | IDSS | 150 | μA | VDS = 24V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 12V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -12V | 2 | ||
| Forward Transconductance | gfs | 9.5 | S | VDS = 10V, ID = 3.4A | 2 | ||
| Continuous Source Current (Body Diode) | IS | 1.3 | A | integral reverse p-n junction diode | 2 | ||
| Pulsed Source Current (Body Diode) | ISM | 17 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | TJ = 25°C, IS = 3.4A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 8.8 | 13 | ns | TJ = 25°C, VR = 24V, IF = 1.3A, di/dt = 100A/μs | 2 | |
| Reverse Recovery Charge | Qrr | 2.7 | 4.1 | nC | TJ = 25°C, VR = 24V, IF = 1.3A, di/dt = 100A/μs | 2 | |
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Continuous Drain Current, TA = 25°C | ID | 3.4 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current, TA = 70°C | ID | 2.7 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 17 | A | 1 | |||
| Maximum Power Dissipation, TA = 25°C | PD | 1.3 | W | TA = 25°C | 1 | ||
| Maximum Power Dissipation, TA = 70°C | PD | 0.8 | W | TA = 70°C | 1 | ||
| Linear Derating Factor | 0.01 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 100 | °C/W | 1 | |||
| Junction-to-Ambient Thermal Resistance (t<10s) | RθJA | 99 | °C/W | t<10s | 1 |
CAD (KiCad official)
- Symbol:
IRLML6346TRPBF - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
irlml6346trpbf-etched.step/irlml6346trpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlml6346trpbf.step/irlml6346trpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (10 pp, sha256
d7f0c119ab4783ab, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRLML6346TRPBF
**Infineon Technologies** · MOSFETs · SOT-23
IRLML6346TRPBF from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; VGS max ±12 V, with threshold 0.5 to 1.1 V (typ. 0.8 V) at VDS = VGS, ID = 10 µA. |
| 2 | S | passive | Source; body diode continuous source current is 1.3 A max and pulsed source current is 17 A. |
| 3 | D | passive | Drain; VDS max 30 V, continuous drain current 3.4 A at TA = 25°C, pulsed drain current 17 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 30 | | | V | VGS = 0V, ID = 250μA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 46 | 63 | mΩ | VGS = 4.5V, ID = 3.4A | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 59 | 80 | mΩ | VGS = 2.5V, ID = 2.7A | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.8 | 1.1 | V | VDS = VGS, ID = 10μA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | μA | VDS = 24V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current (TJ = 125°C) | IDSS | | | 150 | μA | VDS = 24V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 12V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -12V | 2 |
| Forward Transconductance | gfs | 9.5 | | | S | VDS = 10V, ID = 3.4A | 2 |
| Continuous Source Current (Body Diode) | IS | | | 1.3 | A | integral reverse p-n junction diode | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | 17 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | TJ = 25°C, IS = 3.4A, VGS = 0V | 2 |
| Reverse Recovery Time | trr | | 8.8 | 13 | ns | TJ = 25°C, VR = 24V, IF = 1.3A, di/dt = 100A/μs | 2 |
| Reverse Recovery Charge | Qrr | | 2.7 | 4.1 | nC | TJ = 25°C, VR = 24V, IF = 1.3A, di/dt = 100A/μs | 2 |
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Continuous Drain Current, TA = 25°C | ID | | | 3.4 | A | VGS @ 10V | 1 |
| Continuous Drain Current, TA = 70°C | ID | | | 2.7 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 17 | A | | 1 |
| Maximum Power Dissipation, TA = 25°C | PD | | | 1.3 | W | TA = 25°C | 1 |
| Maximum Power Dissipation, TA = 70°C | PD | | | 0.8 | W | TA = 70°C | 1 |
| Linear Derating Factor | | | | 0.01 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 100 | °C/W | | 1 |
| Junction-to-Ambient Thermal Resistance (t<10s) | RθJA | | | 99 | °C/W | t<10s | 1 |
## CAD (KiCad official)
- Symbol: `IRLML6346TRPBF`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `irlml6346trpbf-etched.step` / `irlml6346trpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irlml6346trpbf.step` / `irlml6346trpbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586187034515394560) (10 pp, sha256 `d7f0c119ab4783ab`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irlml6346trpbf-datasheet.pdf)