# IRLML6346TR

**UMW** · MOSFETs · SOT-23

IRLML6346TR from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE pin; gate-to-source voltage VGS is rated at ±12 V maximum. |
| 2 | S | passive | SOURCE pin; continuous body-diode source current IS is 1.3 A and pulsed source current ISM is 17 A. |
| 3 | D | passive | DRAIN pin; drain-to-source voltage VDS is 30 V and continuous drain current ID is 3.4 A at TA=25°C (VGS @ 10 V). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Continuous Drain Current, VGS @ 10V | ID |  |  | 3.4 | A | TA=25°C | 1 |
| Continuous Drain Current, VGS @ 10V | ID |  |  | 2.7 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM |  |  | 17 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 1.3 | W | TA=25°C | 1 |
| Maximum Power Dissipation | PD |  |  | 0.8 | W | TA=70°C | 1 |
| Linear Derating Factor |  |  |  | 0.01 | W/°C |  | 1 |
| Gate-to-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | °C |  | 1 |
| Junction-to-Ambient | RθJA |  |  | 100 | °C/W | Surface mounted on 1 in square Cu board | 2 |
| Junction-to-Ambient (t<10s) | RθJA |  |  | 99 | °C/W | t<10s | 2 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 |  |  | V | ID=250µA, VGS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | 0.5 |  | 1.1 | V | VDS=VGS, ID=10μA | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  |  | 40 | mΩ | VGS=4.5V, ID=3.4A | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  |  | 55 | mΩ | VGS=2.5V, ID=2.7A | 3 |
| Gate-to-Source Forward Leakage | IGSS |  |  | 100 | nA | VGS=12V | 3 |
| Gate-to-Source Reverse Leakage | IGSS | -100 |  |  | nA | VGS=-12V | 3 |
| Drain-to-Source Leakage Current | IDSS |  |  | 1 | µA | VDS=24V, VGS=0V | 3 |
| Drain-to-Source Leakage Current | IDSS |  |  | 150 | µA | VDS=24V, VGS=0V, TJ=125°C | 3 |
| Continuous Source Current (Body Diode) | IS |  |  | 1.3 | A |  | 4 |
| Pulsed Source Current (Body Diode) | ISM |  |  | 17 | A |  | 4 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | TJ=25°C, IS=3.4A, VGS=0V | 4 |
| Reverse Recovery Time | trr |  |  | 13 | ns | TJ=25°C, VR=24V, IF=1.3A, dI/dt=100A/µs | 4 |
| Reverse Recovery Charge | Qrr |  |  | 4.1 | nC | TJ=25°C, VR=24V, IF=1.3A, dI/dt=100A/µs | 4 |

## CAD (KiCad official)

- Symbol: `IRLML6346TR`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `irlml6346tr-etched.step` / `irlml6346tr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irlml6346tr.step` / `irlml6346tr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755879264564989952) (12 pp, sha256 `9d5e01b735171e34`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irlml6346tr-datasheet.pdf)