component

IRLML6344TRPBF-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsirlml6344trpbf-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

IRLML6344TRPBF-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

IRLML6344TRPBF-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V with threshold VGS(th) of 0.7 V min to 2.0 V max at ID = 250 µA.
2 S passive Source; continuous source-drain body diode current is 1.4 A at TC = 25 °C.
3 D passive Drain; drain-source voltage is 30 V max, with continuous drain current of 6.5 A at TC = 25 °C and pulsed drain current of 25 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 30 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 0.7 2 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 10 A VDS ≥ 5 V, VGS = 10 V 2
Total Gate Charge Qg 4.5 6.7 nC VDS = 15 V, VGS = 10 V, ID = 3.4 A 2
Total Gate Charge Qg 2.1 3.2 nC VDS = 15 V, VGS = 4.5 V, ID = 3.4 A 2
Gate Resistance Rg 0.8 4.4 8.8 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 12 20 ns VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 50 75 ns VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 12 20 ns VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 22 35 ns VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 5 10 ns VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 12 20 ns VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 10 15 ns VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 5 10 ns VDD = 15 V, RL = 5.6 Ω, ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 1.4 A TC = 25 °C 2
Pulse Diode Forward Current ISM 15 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 2.7 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 10 20 ns IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 5 10 nC IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source Voltage VDS 30 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current ID 6.5 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID 5.3 A TA = 25 °C, TJ = 150 °C 1
Pulsed Drain Current IDM 25 A 1
Continuous Source-Drain Diode Current IS 1.4 A TC = 25 °C 1
Maximum Power Dissipation PD 1.7 W TC = 25 °C 1
Maximum Power Dissipation PD 1.1 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Peak Temperature 260 °C 1
Maximum Junction-to-Ambient RthJA 90 115 °C/W t ≤ 5 s 1
Maximum Junction-to-Foot (Drain) RthJF 60 75 °C/W Steady State 1
Drain-Source On-State Resistance RDS(on) 0.03 Ω VGS = 10 V, ID = 3.2 A 2
Drain-Source On-State Resistance RDS(on) 0.033 Ω VGS = 4.5 V, ID = 2.8 A 2
Forward Transconductance gfs 11 S VDS = 15 V, ID = 4.8 A 2
Input Capacitance Ciss 335 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 45 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 17 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
VDS Temperature Coefficient ΔVDS/TJ 31 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -5 mV/°C ID = 250 µA 2

CAD (KiCad official)

  • Symbol: IRLML6344TRPBF-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: irlml6344trpbf-vb-etched.step / irlml6344trpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlml6344trpbf-vb.step / irlml6344trpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 b560644a3988ba84, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF