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Contents

README

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IRLML6344TRPBF

Infineon Technologies · MOSFETs · SOT-23

IRLML6344TRPBF from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source power_in Source terminal serving as current return path; body diode forward voltage maximum 1.2V with continuous source current rating 1.3A
2 Gate input Gate-to-Source control signal input with maximum voltage ±12V; threshold voltage between 0.5V and 1.1V at ID=10μA
3 Drain output Drain terminal rated maximum 30V; continuous drain current 5.0A at TA=25°C or 4.0A at TA=70°C (VGS=10V); on-resistance 29mΩ maximum at VGS=4.5V

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 30 V VGS = 0V, ID = 250μA 2
Static Drain-to-Source On-Resistance RDS(on) 22 29 mΩ VGS = 4.5V, ID = 5.0A 2
Static Drain-to-Source On-Resistance RDS(on) 27 37 mΩ VGS = 2.5V, ID = 4.0A 2
Gate Threshold Voltage VGS(th) 0.5 0.8 1.1 V VDS = VGS, ID = 10μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS = 24V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 150 μA VDS = 24V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 12V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -12V 2
Forward Transconductance gfs 19 S VDS = 10V, ID = 5.0A 2
Continuous Source Current (Body Diode) IS 1.3 A MOSFET symbol showing the integral reverse p-n junction diode 2
Pulsed Source Current (Body Diode) ISM 25 A 2
Diode Forward Voltage VSD 1.2 V TJ = 25°C, IS = 5.0A, VGS = 0V 2
Reverse Recovery Time trr 10 15 ns TJ = 25°C, VR = 15V, IF = 1.3A 2
Reverse Recovery Charge Qrr 3.8 5.7 nC di/dt = 100A/μs 2
Drain-Source Voltage VDS 30 V 1
Continuous Drain Current ID @ TA = 25°C 5 A VGS @ 10V 1
Continuous Drain Current ID @ TA = 70°C 4 A VGS @ 10V 1
Pulsed Drain Current IDM 25 A 1
Maximum Power Dissipation PD @TA = 25°C 1.3 W 1
Maximum Power Dissipation PD @TA = 70°C 0.8 W 1
Linear Derating Factor 0.01 W/°C 1
Gate-to-Source Voltage VGS -12 12 V 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Junction-to-Ambient Thermal Resistance RθJA 100 °C/W 1
Junction-to-Ambient Thermal Resistance RθJA 99 °C/W t<10s 1

CAD (KiCad official)

  • Symbol: IRLML6344TRPBF
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: irlml6344trpbf-etched.step / irlml6344trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlml6344trpbf.step / irlml6344trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 fc12d243f636fdbf, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF