component
IRLML6344PBF-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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IRLML6344PBF-HXY
HXY MOSFET · MOSFETs · SOT-23
IRLML6344PBF-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, rated for a gate-source voltage of ±12 V. |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for a drain-source voltage of 30 V. |
| 3 | S | passive | Source of the N-channel MOSFET; the datasheet gives no separate voltage limit for this terminal. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | 33 | V | VGS=0V ID=250μA | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.7 | 0.9 | 1.4 | V | VDS=VGS,ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 41 | 55 | mΩ | VGS=2.5V, ID=4A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 32 | 42 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 28 | 30 | mΩ | VGS=10V, ID=5.8A | 2 | |
| Forward Transconductance | gFS | 10 | S | VDS=5V,ID=5A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=5.8A | 2 | ||
| Diode Forward Current | IS | 5.8 | A | 2 | |||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Drain Current-Continuous | ID | 5.8 | A | 1 | |||
| Drain Current-Pulsed | IDM | 30 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 1.4 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 89 | ℃/W | Note 2 | 1 |
CAD (KiCad official)
- Symbol:
IRLML6344PBF-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
irlml6344pbf-hxy-etched.step/irlml6344pbf-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlml6344pbf-hxy.step/irlml6344pbf-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
b9c4c77f3e30149a, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).