# IRLML6302

**Guangdong Hottech** · MOSFETs · SOT-23

IRLML6302 from Guangdong Hottech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limited to ±12V, with threshold VGS(th) of -0.70V to -1.5V at ID = -250µA. |
| 2 | S | passive | Source; body diode continuous source current is -0.54A max and pulsed -4.9A max. |
| 3 | D | passive | Drain; drain-to-source breakdown is -20V min, continuous drain current -0.78A at TA = 25°C and pulsed -4.9A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Guangdong Hottech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current, VGS @ -4.5V | ID |  |  | -0.78 | A | TA = 25°C | 1 |
| Continuous Drain Current, VGS @ -4.5V | ID |  |  | -0.62 | A | TA = 70°C | 1 |
| Pulsed Drain Current | IDM |  |  | -4.9 | A |  | 1 |
| Power Dissipation | PD |  |  | 540 | mW | TA = 25°C | 1 |
| Linear Derating Factor |  |  |  | 4.3 | mW/˚C |  | 1 |
| Gate-to-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | -5 | V/ns |  | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient | RJA |  |  | 230 | °C/W |  | 1 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -20 |  |  | V | VGS = 0V, ID = -250µA | 1 |
| Gate Threshold Voltage | VGS(th) | -0.7 |  | -1.5 | V | VDS = VGS, ID = -250µA | 1 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  |  | 0.6 |  | VGS = -4.5V, ID = -0.61A | 1 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  |  | 0.9 |  | VGS = -2.7V, ID = -0.31A | 1 |
| Forward Transconductance | gfs | 0.56 |  |  | S | VDS = -10V, ID = -0.31A | 1 |
| Drain-to-Source Leakage Current | IDSS |  |  | -1 | µA | VDS = -16V, VGS = 0V | 1 |
| Drain-to-Source Leakage Current | IDSS |  |  | -25 | µA | VDS = -16V, VGS = 0V, TJ = 125°C | 1 |
| Gate-to-Source Forward Leakage Current | IGSS |  |  | -100 | nA | VGS = -12V | 1 |
| Gate-to-Source Reverse Leakage Current | IGSS |  |  | 100 | nA | VGS = 12V | 1 |
| Total Gate Charge | Qg |  | 2.4 | 3.6 | nC | ID = -0.61A, VDS = -16V, VGS = -4.5V, See Fig. 6 and 9 | 1 |
| Gate-to-Source Charge | Qgs |  | 0.56 | 0.84 | nC |  | 1 |
| Gate-to-Drain ("Miller") Charge | Qgd |  | 1 | 1.5 | nC |  | 1 |
| Continuous Source Current (Body Diode) | IS |  |  | -0.54 | A |  | 1 |
| Pulsed Source Current (Body Diode) | ISM |  |  | -4.9 | A |  | 1 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | TJ = 25°C, IS = -0.61A, VGS = 0V | 1 |
| Reverse Recovery Time | trr |  | 35 | 53 | ns | TJ = 25°C, IF = -0.61A | 1 |

## CAD (KiCad official)

- Symbol: `IRLML6302`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `irlml6302-etched.step` / `irlml6302-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irlml6302.step` / `irlml6302.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Guangdong Hottech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603009543244955648) (6 pp, sha256 `392d2b2e295fcf42`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irlml6302-datasheet.pdf)