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Contents

README

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IRLML5203

Guangdong Hottech · MOSFETs · SOT-23

IRLML5203 from Guangdong Hottech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the P-channel MOSFET, with VGS rated ±20 V and a threshold of -1.0 to -2.5 V at ID = -250µA.
2 S passive Source; carries the continuous body-diode current of up to -1.3 A and is the reference for VGS.
3 D passive Drain; rated for VDS of -30 V and continuous drain current of -3.0 A at TA = 25°C (-2.4 A at 70°C).

Key specifications

Parameter Value
Manufacturer Guangdong Hottech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Continuous Drain Current, TA = 25°C ID -3 A VGS @ -10V, TA = 25°C 1
Continuous Drain Current, TA = 70°C ID -2.4 A VGS @ -10V, TA = 70°C 1
Pulsed Drain Current IDM -24 A 1
Power Dissipation, TA = 25°C PD 1.25 W TA = 25°C 1
Power Dissipation, TA = 70°C PD 0.8 W TA = 70°C 1
Linear Derating Factor 10 mW/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient Thermal Resistance RJA 100 °C/W 1
Drain-to-Source Breakdown Voltage V(BR)DSS -30 V VGS = 0V, ID = -250µA 1
Static Drain-to-Source On-Resistance RDS(on) 98 mΩ VGS = -10V, ID = -3.0A 1
Static Drain-to-Source On-Resistance RDS(on) 165 mΩ VGS = -4.5V, ID = -2.6A 1
Gate Threshold Voltage VGS(th) -1 -2.5 V VDS = VGS, ID = -250µA 1
Forward Transconductance gfs 3.1 S VDS = -10V, ID = -3.0A 1
Drain-to-Source Leakage Current IDSS -1 µA VDS = -24V, VGS = 0V 1
Drain-to-Source Leakage Current IDSS -5 µA VDS = -24V, VGS = 0V, TJ = 70°C 1
Gate-to-Source Forward Leakage IGSS -100 nA VGS = -20V 1
Gate-to-Source Reverse Leakage IGSS 100 nA VGS = 20V 1
Total Gate Charge Qg 9.5 14 nC ID = -3.0A, VDS = -24V, VGS = -10V 1
Gate-to-Source Charge Qgs 2.3 3.5 nC 1
Gate-to-Drain (Miller) Charge Qgd 1.6 2.4 nC 1
Continuous Source Current (Body Diode) IS -1.3 A 1
Pulsed Source Current (Body Diode) ISM -24 A 1
Diode Forward Voltage VSD -1.2 V TJ = 25°C, IS = -1.3A, VGS = 0V 1
Reverse Recovery Time trr 17 26 ns TJ = 25°C, IF = -1.3A 1
Reverse Recovery Charge Qrr 12 18 nC di/dt = -100A/µs 1

CAD (KiCad official)

  • Symbol: IRLML5203
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: irlml5203-etched.step / irlml5203-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlml5203.step / irlml5203.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Guangdong Hottech datasheet (6 pp, sha256 73560baa3c40926e, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF