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Contents

README

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IRLML2402TR

UMW · MOSFETs · SOT-23

IRLML2402TR from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the N-channel MOSFET; the datasheet limits gate-to-source voltage to ±12 V (VGS).
2 S passive SOURCE terminal of the MOSFET; the datasheet rates continuous source (body diode) current IS at 0.54 A.
3 D passive DRAIN terminal of the MOSFET; the datasheet rates continuous drain current ID at 1.2 A (TA=25°C) and pulsed drain current IDM at 7.4 A.

Key specifications

Parameter Value
Manufacturer UMW
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous Drain Current ID 1.2 A VGS @ 4.5V, TA=25°C 1
Continuous Drain Current ID 0.95 A VGS @ 4.5V, TA=70°C 1
Pulsed Drain Current IDM 7.4 A TA=25°C unless otherwise noted 1
Power Dissipation PD 540 mW TA=25°C 1
Linear Derating Factor 4.3 mW/°C 1
Gate-to-Source Voltage VGS -12 12 V 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns 1
Junction and Storage Temperature Range TJ,TSTG -55 150 °C 1
Maximum Junction-to-Ambient RθJA 230 °C/W Surface mounted on FR-4 board, t ≤ 5 sec 1
Drain-Source Breakdown Voltage V(BR)DSS 20 V ID=250µA, VGS=0V 2
Gate Threshold Voltage VGS(th) 0.7 1.3 V VDS=VGS, ID=250µA 2
Static Drain-to-Source On-Resistance RDS(ON) 145 mΩ VGS=4.5V, ID=0.93A 2
Static Drain-to-Source On-Resistance RDS(ON) 175 mΩ VGS=2.7V, ID=0.47 2
Drain-to-Source Leakage Current IDSS 1 µA VDS=16V, VGS=0V 2
Drain-to-Source Leakage Current IDSS 25 µA VDS=16V, VGS=0V, TJ=125°C 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-12V 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS=12V 2
Continuous Source Current (Body Diode) IS 0.54 A TJ=25°C, IS=0.93A, VGS=0V 3
Pulsed Source Current (Body Diode) ISM 7.4 A 3
Diode Forward Voltage VSD 1.2 V TJ=25°C, IS=0.93A, VGS=0V 3
Reverse Recovery Time trr 38 ns TJ=25°C, IF=0.93A, dI/dt=100A/µs 3
Reverse Recovery Charge Qrr 24 nC TJ=25°C, IF=0.93A, dI/dt=100A/µs 3
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/ΔTJ 0.024 V/°C ID=1mA, Reference to 25°C 2
Total Gate Charge Qg 2.6 nC ID=0.93A, VDD=16V, VGS=4.5V, see Fig.6 and 9 2
Input Capacitance Ciss 110 pF VGS=0V, VDS=15V, ƒ=1MHz, see Fig.5 2
Output Capacitance Coss 51 pF VGS=0V, VDS=15V, ƒ=1MHz, see Fig.5 2
Reverse Transfer Capacitance Crss 25 pF VGS=0V, VDS=15V, ƒ=1MHz, see Fig.5 2
Reverse Recovery Time trr 25 ns TJ=25°C, IF=0.93A, dI/dt=100A/µs 3
Reverse Recovery Charge Qrr 16 nC TJ=25°C, IF=0.93A, dI/dt=100A/µs 3

CAD (KiCad official)

  • Symbol: IRLML2402TR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: irlml2402tr-etched.step / irlml2402tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlml2402tr.step / irlml2402tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 cf22c573cb30a5ca, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF