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page.json irlml2246trpbf: specified limits as data (metadata.characteristics, 25 rows from the datasheet) · Ray 24d ago
README.md irlml2246trpbf: specified limits as data (metadata.characteristics, 25 rows from the datasheet) · Ray 24d ago

IRLML2246TRPBF

Infineon Technologies · MOSFETs · SOT-23

IRLML2246TRPBF from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage limited to ±12 V max, with VGS(th) between -0.4 V and -1.1 V.
2 S passive Source of the P-channel MOSFET; continuous source (body diode) current is -1.3 A max.
3 D passive Drain; drain-source voltage rated -20 V, continuous drain current -2.6 A at TA = 25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS -20 V VGS = 0V, ID = -250μA 2
Static Drain-to-Source On-Resistance RDS(on) 90 135 mΩ VGS = -4.5V, ID = -2.6A 2
Static Drain-to-Source On-Resistance RDS(on) 157 236 mΩ VGS = -2.5V, ID = -2.1A 2
Gate Threshold Voltage VGS(th) -0.4 -1.1 V VDS = VGS, ID = -10μA 2
Drain-to-Source Leakage Current IDSS -1 μA VDS = -16V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS -150 μA VDS = -16V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 12V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -12V 2
Forward Transconductance gfs 3.4 S VDS = -10V, ID = -2.6A 2
Continuous Source Current (Body Diode) IS -1.3 A 2
Pulsed Source Current (Body Diode) ISM -11 A 2
Diode Forward Voltage VSD -1.2 V TJ = 25°C, IS = -2.6A, VGS = 0V 2
Reverse Recovery Time trr 17 26 ns TJ = 25°C, VR = -15V, IF = -2.6A 2
Reverse Recovery Charge Qrr 6.2 9.3 nC TJ = 25°C, VR = -15V, IF = -2.6A 2
Drain-Source Voltage VDS -20 V 1
Continuous Drain Current ID -2.6 A TA = 25°C, VGS @ -10V 1
Continuous Drain Current ID -2.1 A TA = 70°C, VGS @ -10V 1
Pulsed Drain Current IDM -11 A 1
Maximum Power Dissipation PD 1.3 W TA = 25°C 1
Maximum Power Dissipation PD 0.8 W TA = 70°C 1
Linear Derating Factor 0.01 W/°C 1
Gate-to-Source Voltage VGS -12 12 V 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Junction-to-Ambient RJA 100 °C/W 1
Junction-to-Ambient (t<10s) RJA 99 °C/W t<10s 1

CAD (KiCad official)

  • Symbol: IRLML2246TRPBF
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: irlml2246trpbf-etched.step / irlml2246trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlml2246trpbf.step / irlml2246trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 70dbd59d8ac941bf, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF