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Ray Publish 0.1.0 36edf09 17d ago

IRLML2246TR

UMW · MOSFETs · SOT-23

IRLML2246TR from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the P-channel MOSFET; the datasheet rates gate-to-source voltage VGS at ±12 V maximum.
2 S passive SOURCE terminal of the P-channel MOSFET, which carries the body-diode source current (IS = -1.3 A continuous, ISM = -11 A pulsed per the datasheet).
3 D passive DRAIN terminal of the P-channel MOSFET; the datasheet rates drain-source voltage VDS at -20 V with continuous drain current ID = -2.6 A at VGS = -10 V and TA = 25°C.

Key specifications

Parameter Value
Manufacturer UMW
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V TA=25°C unless otherwise noted 1
Continuous Drain Current, VGS @ -10V ID -2.6 A TA=25°C 1
Continuous Drain Current, VGS @ -10V ID -2.1 A TA=70°C 1
Pulsed Drain Current IDM -11 A TA=25°C unless otherwise noted; pulse width limited by max. junction temperature (note ①) 1
Maximum Power Dissipation PD 1.3 W TA=25°C 1
Maximum Power Dissipation PD 0.8 W TA=70°C 1
Linear Derating Factor 0.01 W/°C 1
Gate-to-Source Voltage VGS -12 12 V 1
Junction and Storage Temperature Range TJ,TSTG -55 150 °C 1
Junction-to-Ambient RθJA 100 °C/W Surface mounted on 1 in square Cu board (note ③), steady state 2
Junction-to-Ambient (t<10s) RθJA 99 °C/W t<10s (note ④) 2
Drain-Source Breakdown Voltage V(BR)DSS -20 V ID=-250µA, VGS=0V 3
Gate Threshold Voltage VGS(th) -0.4 -1.1 V VDS=VGS, ID=-10μA 3
Drain-to-Source Leakage Current IDSS -1 µA VDS=-16V, VGS=0V 3
Drain-to-Source Leakage Current IDSS -150 µA VDS=-16V, VGS=0V, TJ=125°C 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=12V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-12V 3
Static Drain-to-Source On-Resistance (from Features) RDS(ON) 135 mΩ VGS=-4.5V 1
Static Drain-to-Source On-Resistance (from Features) RDS(ON) 160 mΩ VGS=-2.5V 1

CAD (KiCad official)

  • Symbol: IRLML2246TR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: irlml2246tr-etched.step / irlml2246tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlml2246tr.step / irlml2246tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (12 pp, sha256 9f483ec4ca3204d7, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF