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IRLML2244TRPBF
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Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRLML2244TRPBF
Infineon Technologies · MOSFETs · SOT-23
IRLML2244TRPBF from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel HEXFET; VGS is limited to ±12 V (absolute maximum). |
| 2 | S | passive | Source of the MOSFET; the datasheet rates continuous source (body diode) current IS at -1.3 A and pulsed ISM at -18 A. |
| 3 | D | passive | Drain of the MOSFET; drain-source voltage VDS is rated at -20 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | -20 | V | 1 | |||
| Continuous Drain Current | ID @ TA = 25°C | -4.3 | A | VGS @ -4.5V | 1 | ||
| Continuous Drain Current | ID @ TA = 70°C | -3.4 | A | VGS @ -4.5V | 1 | ||
| Pulsed Drain Current | IDM | -18 | A | 1 | |||
| Maximum Power Dissipation | PD @ TA = 25°C | 1.3 | W | 1 | |||
| Maximum Power Dissipation | PD @ TA = 70°C | 0.8 | W | 1 | |||
| Linear Derating Factor | 0.01 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 100 | °C/W | 1 | |||
| Junction-to-Ambient Thermal Resistance (t<10s) | RθJA | 99 | °C/W | t < 10 s | 1 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS = 0V, ID = -250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -0.4 | -1.1 | V | VDS = VGS, ID = -10μA | 2 | |
| Drain-to-Source Leakage Current | IDSS | 1 | μA | VDS = -16V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 150 | μA | VDS = -16V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | -100 | nA | VGS = 12V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | 100 | nA | VGS = -12V | 2 | ||
| Forward Transconductance | gfs | 6.5 | S | VDS = -10V, ID = -4.3A | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 42 | 54 | mΩ | VGS = -4.5V, ID = -4.3A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 71 | 95 | mΩ | VGS = -2.5V, ID = -3.4A | 2 | |
| Continuous Source Current (Body Diode) | IS | -1.3 | A | 2 | |||
| Pulsed Source Current (Body Diode) | ISM | -18 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | TJ = 25°C, IS = -4.3A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 21 | 32 | ns | TJ = 25°C, VR = -16V, IF = -4.3A | 2 | |
| Reverse Recovery Charge | Qrr | 9 | 14 | nC | TJ = 25°C, VR = -16V, IF = -4.3A | 2 |
CAD (KiCad official)
- Symbol:
IRLML2244TRPBF - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
irlml2244trpbf-etched.step/irlml2244trpbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlml2244trpbf.step/irlml2244trpbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (10 pp, sha256
1013f81fb70c3ba5, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRLML2244TRPBF
**Infineon Technologies** · MOSFETs · SOT-23
IRLML2244TRPBF from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel HEXFET; VGS is limited to ±12 V (absolute maximum). |
| 2 | S | passive | Source of the MOSFET; the datasheet rates continuous source (body diode) current IS at -1.3 A and pulsed ISM at -18 A. |
| 3 | D | passive | Drain of the MOSFET; drain-source voltage VDS is rated at -20 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | | | -20 | V | | 1 |
| Continuous Drain Current | ID @ TA = 25°C | | | -4.3 | A | VGS @ -4.5V | 1 |
| Continuous Drain Current | ID @ TA = 70°C | | | -3.4 | A | VGS @ -4.5V | 1 |
| Pulsed Drain Current | IDM | | | -18 | A | | 1 |
| Maximum Power Dissipation | PD @ TA = 25°C | | | 1.3 | W | | 1 |
| Maximum Power Dissipation | PD @ TA = 70°C | | | 0.8 | W | | 1 |
| Linear Derating Factor | | | | 0.01 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 100 | °C/W | | 1 |
| Junction-to-Ambient Thermal Resistance (t<10s) | RθJA | | | 99 | °C/W | t < 10 s | 1 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -20 | | | V | VGS = 0V, ID = -250μA | 2 |
| Gate Threshold Voltage | VGS(th) | -0.4 | | -1.1 | V | VDS = VGS, ID = -10μA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | μA | VDS = -16V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 150 | μA | VDS = -16V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | -100 | nA | VGS = 12V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | 100 | nA | VGS = -12V | 2 |
| Forward Transconductance | gfs | 6.5 | | | S | VDS = -10V, ID = -4.3A | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 42 | 54 | mΩ | VGS = -4.5V, ID = -4.3A | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 71 | 95 | mΩ | VGS = -2.5V, ID = -3.4A | 2 |
| Continuous Source Current (Body Diode) | IS | | | -1.3 | A | | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | -18 | A | | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | TJ = 25°C, IS = -4.3A, VGS = 0V | 2 |
| Reverse Recovery Time | trr | | 21 | 32 | ns | TJ = 25°C, VR = -16V, IF = -4.3A | 2 |
| Reverse Recovery Charge | Qrr | | 9 | 14 | nC | TJ = 25°C, VR = -16V, IF = -4.3A | 2 |
## CAD (KiCad official)
- Symbol: `IRLML2244TRPBF`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `irlml2244trpbf-etched.step` / `irlml2244trpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irlml2244trpbf.step` / `irlml2244trpbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586189892838047744) (10 pp, sha256 `1013f81fb70c3ba5`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irlml2244trpbf-datasheet.pdf)