component
IRLML2030TR
Public Made by Adomby adom
UMW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRLML2030TR
UMW · MOSFETs · SOT-23
IRLML2030TR from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal; the device's absolute gate-to-source voltage rating is ±20 V (VGS). |
| 2 | S | passive | SOURCE terminal; the integral body diode runs source to drain, rated at a continuous source current IS of 1.6 A. |
| 3 | D | passive | DRAIN terminal; the device is rated for VDS of 30 V and continuous drain current ID of 2.7 A at TA=25°C with VGS=10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | ID=250µA, VGS=0V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1.3 | 2.6 | V | VDS=VGS, ID=25μA | 3 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 80 | 100 | mΩ | VGS=10V, ID=2.7A | 3 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 123 | 154 | mΩ | VGS=4.5V, ID=2.2A | 3 | |
| Forward Transconductance | gfs | 7.6 | S | VDS=10V, ID=2.7A | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS=24V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 150 | µA | VDS=24V, VGS=0V, TJ=125°C | 3 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V | 3 | ||
| Continuous Source Current (Body Diode) | IS | 1.6 | A | 4 | |||
| Pulsed Source Current (Body Diode) | ISM | 11 | A | 4 | |||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Continuous Drain Current, VGS @ 10V | ID | 2.7 | A | TA=25°C | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID | 2.2 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 11 | A | 1 | |||
| Maximum Power Dissipation | PD | 1.3 | W | TA=25°C | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | W | TA=70°C | 1 | ||
| Linear Derating Factor | 0.01 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient | RθJA | 100 | °C/W | note ③: surface mounted on 1 in square Cu board | 2 | ||
| Junction-to-Ambient (t<10s) | RθJA | 99 | °C/W | t<10s | 2 |
CAD (KiCad official)
- Symbol:
IRLML2030TR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
irlml2030tr-etched.step/irlml2030tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlml2030tr.step/irlml2030tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (12 pp, sha256
24014d66556661d0, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRLML2030TR
**UMW** · MOSFETs · SOT-23
IRLML2030TR from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal; the device's absolute gate-to-source voltage rating is ±20 V (VGS). |
| 2 | S | passive | SOURCE terminal; the integral body diode runs source to drain, rated at a continuous source current IS of 1.6 A. |
| 3 | D | passive | DRAIN terminal; the device is rated for VDS of 30 V and continuous drain current ID of 2.7 A at TA=25°C with VGS=10 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | | | V | ID=250µA, VGS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | 1.3 | | 2.6 | V | VDS=VGS, ID=25μA | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | 80 | 100 | mΩ | VGS=10V, ID=2.7A | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | 123 | 154 | mΩ | VGS=4.5V, ID=2.2A | 3 |
| Forward Transconductance | gfs | 7.6 | | | S | VDS=10V, ID=2.7A | 3 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | µA | VDS=24V, VGS=0V | 3 |
| Drain-to-Source Leakage Current | IDSS | | | 150 | µA | VDS=24V, VGS=0V, TJ=125°C | 3 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS=20V | 3 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS=-20V | 3 |
| Continuous Source Current (Body Diode) | IS | | | 1.6 | A | | 4 |
| Pulsed Source Current (Body Diode) | ISM | | | 11 | A | | 4 |
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Continuous Drain Current, VGS @ 10V | ID | | | 2.7 | A | TA=25°C | 1 |
| Continuous Drain Current, VGS @ 10V | ID | | | 2.2 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM | | | 11 | A | | 1 |
| Maximum Power Dissipation | PD | | | 1.3 | W | TA=25°C | 1 |
| Maximum Power Dissipation | PD | | | 0.8 | W | TA=70°C | 1 |
| Linear Derating Factor | | | | 0.01 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | °C | | 1 |
| Junction-to-Ambient | RθJA | | | 100 | °C/W | note ③: surface mounted on 1 in square Cu board | 2 |
| Junction-to-Ambient (t<10s) | RθJA | | | 99 | °C/W | t<10s | 2 |
## CAD (KiCad official)
- Symbol: `IRLML2030TR`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `irlml2030tr-etched.step` / `irlml2030tr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irlml2030tr.step` / `irlml2030tr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755879152257900544) (12 pp, sha256 `24014d66556661d0`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irlml2030tr-datasheet.pdf)