component
IRLIZ14GPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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IRLIZ14GPBF-VB
VBsemi Elec · MOSFETs · TO-220F
IRLIZ14GPBF-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-source voltage is rated at ±20 V, and the gate charge Qg is 95 nC maximum. |
| 2 | D | passive | Drain terminal, electrically connected to the case; the continuous drain current is 45 A at TC = 25 °C with a 60 V drain-source rating. |
| 3 | S | passive | Source terminal, the reference for VGS; the continuous source-drain diode current is rated for this terminal, with a pulsed diode current of 120 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 45 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Pulsed Drain Current | IDM | 220 | A | Note a: repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Linear Derating Factor | 0.32 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 100 | mJ | Note b: VDD = 25 V, starting TJ = 25 °C, L = 129 µH, RG = 25 Ω, IAS = 30 A | 1 | ||
| Maximum Power Dissipation | PD | 52 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 4.5 | V/ns | Note c: ISD ≤ 52 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | °C | for 10 s, note d: 1.6 mm from case | 1 | |||
| Mounting Torque | 10 | lbf · in | 6-32 or M3 screw | 1 | |||
| Mounting Torque | 1.1 | N · m | 6-32 or M3 screw | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 65 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 3.1 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | 60 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | µA | VDS = 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 48 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| Forward Transconductance | gfs | 15 | S | VDS = 25 V, ID = 18 A | 2 | ||
| Pulsed Diode Forward Current | ISM | 120 | A | 2 | |||
| Body Diode Voltage | VSD | 2.5 | V | TJ = 25 °C, IS = 30 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 140 | 300 | ns | TJ = 25 °C, IF = 52 A, dI/dt = 100 A/µs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 1.2 | 2.8 | µC | 2 |
CAD (KiCad official)
- Symbol:
IRLIZ14GPBF-VB - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
0e121bf309a88326, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).