component
IRLH5030TRPBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRLH5030TRPBF-VB
VBsemi Elec · MOSFETs · DFN5x6-8
IRLH5030TRPBF-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the drain-source voltage rating is 100 V and the continuous drain current is 95 A at TC = 25 °C (package limited). |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied in parallel with the other source pins; the continuous source-drain diode current is 70 A at TC = 25 °C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied in parallel with the other source pins; the pulsed drain current is 250 A at t = 100 μs. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is limited to ±20 V and the gate-source threshold voltage is 2 V to 5 V at ID = 250 μA. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET; the drain-source breakdown voltage is at least 100 V at VGS = 0 V, ID = 250 μA. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, tied in parallel with the other drain pins; the typical RDS(on) is 0.006 Ω at VGS = 10 V, ID = 10 A. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, tied in parallel with the other drain pins; the drain leakage IDSS is at most 1 μA at VDS = 100 V, VGS = 0 V. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, tied in parallel with the other drain pins; the junction-to-case thermal resistance is 1.6 °C/W typical and 2 °C/W maximum. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
IRLH5030TRPBF-VB - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
irlh5030trpbf-vb-etched.step/irlh5030trpbf-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlh5030trpbf-vb.step/irlh5030trpbf-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
3d1c60adb959ffa1, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).