component
IRLB8748PBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownIRLB8748PBF
Infineon Technologies · MOSFETs · TO-220AB
IRLB8748PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the HEXFET; gate-to-source voltage is limited to ±20 V per the absolute maximum ratings. |
| 2 | D | passive | Drain terminal; the device is rated for a 30 V drain-to-source voltage (VDSS) and carries the continuous drain current. |
| 3 | S | passive | Source terminal; the reference for gate-to-source voltage and the return path for drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 3.8 | 4.8 | mΩ | VGS = 10V, ID = 40A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 5.5 | 6.8 | mΩ | VGS = 4.5V, ID = 32A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.35 | 1.8 | 2.35 | V | VDS = VGS, ID = 50µA | 2 |
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS = 24V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 150 | µA | VDS = 24V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 196 | S | VDS = 15V, ID = 32A | 2 | ||
| Total Gate Charge | Qg | 15 | 23 | nC | ID = 32A, VDS = 15V, VGS = 4.5V | 2 | |
| Gate Resistance | RG | 2 | 3.5 | Ω | not legible in extracted text | 2 | |
| Diode Forward Voltage | VSD | 1 | V | TJ = 25°C, IS = 32A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 23 | 35 | ns | TJ = 25°C, IF = 32A, VDD = 15V, di/dt = 200A/µs | 2 | |
| Reverse Recovery Charge | Qrr | 39 | 59 | nC | TJ = 25°C, IF = 32A, VDD = 15V, di/dt = 200A/µs | 2 | |
| Drain-to-Source Voltage | VDS | 30 | V | absolute maximum rating | 1 | ||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | printed as ± 20 V | 1 | |
| Continuous Drain Current, Silicon Limited | ID | 92 | A | TC = 25°C, VGS @ 10V (silicon limited) | 1 | ||
| Continuous Drain Current, Silicon Limited | ID | 65 | A | TC = 100°C, VGS @ 10V (silicon limited) | 1 | ||
| Continuous Drain Current, Package Limited | ID | 78 | A | TC = 25°C, VGS @ 10V (package limited) | 1 | ||
| Pulsed Drain Current | IDM | 370 | A | pulsed drain current | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | operating junction and storage temperature range | 1 | |
| Soldering Temperature | 300 | °C | for 10 seconds, 1.6mm from case | 1 | |||
| Mounting Torque | 10 | lbfin | 6-32 or M3 screw; printed as 10 lbfin (1.1Nm) | 1 | |||
| Junction-to-Case Thermal Resistance | RθJC | 2 | °C/W | junction-to-case | 1 | ||
| Case-to-Sink Thermal Resistance | RθCS | 0.5 | °C/W | case-to-sink, flat greased surface | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 62 | °C/W | junction-to-ambient | 1 |
CAD (KiCad official)
- Symbol:
IRLB8748PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irlb8748pbf-etched.step/irlb8748pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlb8748pbf.step/irlb8748pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
aa8748e7152f1121, retrieved 2026-10-13, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).