component
IRLB8743PBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRLB8743PBF
Infineon Technologies · MOSFETs · TO-220AB
IRLB8743PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; control input, rated for VGS of ±20V maximum, with RDS(on) max 3.2mΩ at VGS = 10V and 4.2mΩ at VGS = 4.5V. |
| 2 | D | passive | Drain; also connected to the thermal tab, with VDS rated 30V maximum and continuous current of 78A package limited. |
| 3 | S | passive | Source; current return terminal of the MOSFET, with body diode continuous current and pulsed drain current up to 620A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (Silicon Limited) | ID | 150 | A | TC = 25°C, VGS @ 10V | 1 | ||
| Continuous Drain Current (Silicon Limited) | ID | 110 | A | TC = 100°C, VGS @ 10V | 1 | ||
| Continuous Drain Current (Package Limited) | ID | 78 | A | TC = 25°C, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 620 | A | 1 | |||
| Maximum Power Dissipation | PD | 140 | W | TC = 25°C | 1 | ||
| Maximum Power Dissipation | PD | 68 | W | TC = 100°C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | 10 s, 1.6mm from case | 1 | |||
| Mounting Torque | 10 | lbfin | 6-32 or M3 screw (1.1 Nm) | 1 | |||
| Junction-to-Case Thermal Resistance | RθJC | 1.11 | °C/W | 1 | |||
| Case-to-Sink Thermal Resistance | RθCS | 0.5 | °C/W | Flat, greased surface | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 62 | °C/W | 1 | |||
| Drain-to-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 2.5 | 3.2 | mΩ | VGS = 10V, ID = 40A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 3.5 | 4.2 | mΩ | VGS = 4.5V, ID = 32A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.35 | 1.8 | 2.35 | V | VDS = VGS, ID = 100µA | 2 |
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS = 24V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 100 | µA | VDS = 24V, VGS = 0V, TJ = 125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Forward Transconductance | gfs | 190 | S | VDS = 15V, ID = 32A | 2 | ||
| Total Gate Charge | Qg | 36 | 54 | nC | 2 | ||
| Gate Resistance | RG | 0.85 | 1.5 | Ω | 2 | ||
| Diode Forward Voltage | VSD | 1 | V | TJ = 25°C, IS = 32A, VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 29 | 44 | ns | TJ = 25°C, IF = 32A, VDD = 15V, di/dt = 200A/µs | 2 | |
| Reverse Recovery Charge | Qrr | 49 | 74 | nC | TJ = 25°C, IF = 32A, VDD = 15V, di/dt = 200A/µs | 2 | |
| Continuous Source Current (Body Diode) | IS | 150 | A | TJ = 25°C, IS = 32A, VGS = 0V (integral p-n diode) | 2 | ||
| Pulsed Source Current (Body Diode) | ISM | 620 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 310 | mJ | 2 | |||
| Avalanche Current | IAR | 32 | A | 2 | |||
| Repetitive Avalanche Energy | EAR | 14 | mJ | 2 | |||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 17 | mV/°C | Reference to 25°C, ID = 1mA | 2 | ||
| Gate Threshold Voltage Coefficient | ΔVGS(th)/ΔTJ | -7.7 | mV/°C | 2 |
CAD (KiCad official)
- Symbol:
IRLB8743PBF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irlb8743pbf-etched.step/irlb8743pbf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlb8743pbf.step/irlb8743pbf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (10 pp, sha256
acf2086f0c760323, retrieved 2026-10-25, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRLB8743PBF
**Infineon Technologies** · MOSFETs · TO-220AB
IRLB8743PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; control input, rated for VGS of ±20V maximum, with RDS(on) max 3.2mΩ at VGS = 10V and 4.2mΩ at VGS = 4.5V. |
| 2 | D | passive | Drain; also connected to the thermal tab, with VDS rated 30V maximum and continuous current of 78A package limited. |
| 3 | S | passive | Source; current return terminal of the MOSFET, with body diode continuous current and pulsed drain current up to 620A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current (Silicon Limited) | ID | | | 150 | A | TC = 25°C, VGS @ 10V | 1 |
| Continuous Drain Current (Silicon Limited) | ID | | | 110 | A | TC = 100°C, VGS @ 10V | 1 |
| Continuous Drain Current (Package Limited) | ID | | | 78 | A | TC = 25°C, VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 620 | A | | 1 |
| Maximum Power Dissipation | PD | | | 140 | W | TC = 25°C | 1 |
| Maximum Power Dissipation | PD | | | 68 | W | TC = 100°C | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 1 |
| Soldering Temperature | | | | 300 | °C | 10 s, 1.6mm from case | 1 |
| Mounting Torque | | | | 10 | lbfin | 6-32 or M3 screw (1.1 Nm) | 1 |
| Junction-to-Case Thermal Resistance | RθJC | | | 1.11 | °C/W | | 1 |
| Case-to-Sink Thermal Resistance | RθCS | | 0.5 | | °C/W | Flat, greased surface | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 62 | °C/W | | 1 |
| Drain-to-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS = 0V, ID = 250µA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 2.5 | 3.2 | mΩ | VGS = 10V, ID = 40A | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 3.5 | 4.2 | mΩ | VGS = 4.5V, ID = 32A | 2 |
| Gate Threshold Voltage | VGS(th) | 1.35 | 1.8 | 2.35 | V | VDS = VGS, ID = 100µA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | µA | VDS = 24V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 100 | µA | VDS = 24V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -20V | 2 |
| Forward Transconductance | gfs | 190 | | | S | VDS = 15V, ID = 32A | 2 |
| Total Gate Charge | Qg | | 36 | 54 | nC | | 2 |
| Gate Resistance | RG | | 0.85 | 1.5 | Ω | | 2 |
| Diode Forward Voltage | VSD | | | 1 | V | TJ = 25°C, IS = 32A, VGS = 0V | 2 |
| Reverse Recovery Time | trr | | 29 | 44 | ns | TJ = 25°C, IF = 32A, VDD = 15V, di/dt = 200A/µs | 2 |
| Reverse Recovery Charge | Qrr | | 49 | 74 | nC | TJ = 25°C, IF = 32A, VDD = 15V, di/dt = 200A/µs | 2 |
| Continuous Source Current (Body Diode) | IS | | | 150 | A | TJ = 25°C, IS = 32A, VGS = 0V (integral p-n diode) | 2 |
| Pulsed Source Current (Body Diode) | ISM | | | 620 | A | | 2 |
| Single Pulse Avalanche Energy | EAS | | | 310 | mJ | | 2 |
| Avalanche Current | IAR | | | 32 | A | | 2 |
| Repetitive Avalanche Energy | EAR | | | 14 | mJ | | 2 |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | | 17 | | mV/°C | Reference to 25°C, ID = 1mA | 2 |
| Gate Threshold Voltage Coefficient | ΔVGS(th)/ΔTJ | | -7.7 | | mV/°C | | 2 |
## CAD (KiCad official)
- Symbol: `IRLB8743PBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irlb8743pbf-etched.step` / `irlb8743pbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irlb8743pbf.step` / `irlb8743pbf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](docs/irlb8743pbf-datasheet.pdf) (10 pp, sha256 `acf2086f0c760323`, retrieved 2026-10-25, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irlb8743pbf-datasheet.pdf)