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IRLB4132PBF

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRLB4132PBF

Infineon Technologies · MOSFETs · TO-220AB

IRLB4132PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the HEXFET; gate-to-source voltage is rated ±20 V (VGS).
2 D passive Drain terminal, electrically connected to the mounting tab; drain-to-source voltage is rated 30 V (VDSS).
3 S passive Source terminal, the return path for drain current; pulsed drain current IDM is rated 620 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDS 30 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current, Silicon Limited ID 150 A TC = 25°C, VGS @ 10V 1
Continuous Drain Current, Silicon Limited ID 100 A TC = 100°C, VGS @ 10V 1
Continuous Drain Current, Package Limited ID 78 A TC = 25°C, VGS @ 10V 1
Pulsed Drain Current IDM 620 A 1
Maximum Power Dissipation PD 140 W TC = 25°C 1
Maximum Power Dissipation PD 68 W TC = 100°C 1
Linear Derating Factor 0.9 W/°C 1
Operating Junction Temperature Range TJ -55 175 °C 1
Storage Temperature Range TSTG -55 175 °C 1
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 1
Mounting Torque 10 lbf·in 6-32 or M3 screw (1.1 N·m) 1
Junction-to-Case Thermal Resistance RθJC 1.11 °C/W 1
Case-to-Sink Thermal Resistance RθCS 0.5 °C/W Flat, greased surface 1
Junction-to-Ambient Thermal Resistance RθJA 62 °C/W 1
Drain-to-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250µA 2
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 17 mV/°C Reference to 25°C, ID = 1mA 2
Static Drain-to-Source On-Resistance RDS(on) 2.5 3.5 mΩ VGS = 10V, ID = 40A 2
Static Drain-to-Source On-Resistance RDS(on) 3.5 4.5 mΩ VGS = 4.5V, ID = 32A 2
Gate Threshold Voltage VGS(th) 1.35 1.8 2.35 V VDS = VGS, ID = 100µA 2
Gate Threshold Voltage Coefficient ΔVGS(th)/ΔTJ -7.7 mV/°C 2
Drain-to-Source Leakage Current IDSS 1 µA VDS = 24V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 100 µA VDS = 24V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 190 S VDS = 15V, ID = 32A 2
Total Gate Charge Qg 36 54 nC VGS = 4.5V, VDS = 15V, ID = 32A 2
Pre-Vth Gate-to-Source Charge Qgs1 9.1 nC VDS = 15V, VGS = 4.5V, ID = 32A 2
Post-Vth Gate-to-Source Charge Qgs2 4.2 nC VDS = 15V, VGS = 4.5V, ID = 32A 2
Gate-to-Drain Charge Qgd 13 nC VDS = 15V, VGS = 4.5V, ID = 32A 2
Gate Charge Overdrive Qgodr 13 nC VDS = 15V, VGS = 4.5V, ID = 32A 2
Switch Charge (Qgs2 + Qgd) Qsw 17.2 nC VDS = 15V, VGS = 4.5V, ID = 32A 2
Output Charge Qoss 21 nC VDS = 16V, VGS = 0V 2
Gate Resistance RG 0.85 1.5 Ω 2
Turn-On Delay Time td(on) 23 ns VDD = 15V, ID = 32A, VGS = 4.5V, RG = 1.8Ω 2
Rise Time tr 92 ns VDD = 15V, ID = 32A, VGS = 4.5V, RG = 1.8Ω 2
Turn-Off Delay Time td(off) 25 ns VDD = 15V, ID = 32A, VGS = 4.5V, RG = 1.8Ω 2
Fall Time tf 36 ns VDD = 15V, ID = 32A, VGS = 4.5V, RG = 1.8Ω 2
Input Capacitance Ciss 5110 pF VGS = 0V, VDS = 15V, f = 1.0MHz 2
Output Capacitance Coss 960 pF VGS = 0V, VDS = 15V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 440 pF VGS = 0V, VDS = 15V, f = 1.0MHz 2
Single Pulse Avalanche Energy EAS 310 mJ Starting TJ = 25°C, L = 0.61mH, RG = 25Ω, IAS = 32A 2
Single Pulse Avalanche Energy EAS 900 mJ Starting TJ = 25°C, L = 0.50mH, RG = 25Ω, IAS = 60A, VDD = 25V 2
Avalanche Current IAR 32 A 2
Repetitive Avalanche Energy EAR 14 mJ 2
Diode Forward Voltage VSD 1 V TJ = 25°C, IS = 32A, VGS = 0V 2
Reverse Recovery Time trr 29 44 ns TJ = 25°C, IF = 32A, VDD = 15V, di/dt = 200A/µs 2
Reverse Recovery Charge Qrr 49 74 nC TJ = 25°C, IF = 32A, VDD = 15V, di/dt = 200A/µs 2

CAD (KiCad official)

  • Symbol: IRLB4132PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irlb4132pbf-etched.step / irlb4132pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlb4132pbf.step / irlb4132pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 d214103d31e9899a, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF