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IRLB4030PBF

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRLB4030PBF

Infineon Technologies · MOSFETs · TO-220AB

IRLB4030PBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-to-source voltage is rated at ±16V (absolute maximum VGS).
2 D passive Drain terminal; drain-to-source breakdown voltage V(BR)DSS is 100V minimum and continuous drain current is 180A at TC = 25°C with VGS = 10V.
3 S passive Source terminal; the integral body diode has a maximum forward voltage VSD of 1.3V at IS = 110A and VGS = 0V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous Drain Current, VGS @ 10V ID 180 A TC = 25°C, VGS @ 10V 1
Continuous Drain Current, VGS @ 10V ID 130 A TC = 100°C, VGS @ 10V 1
Pulsed Drain Current IDM 730 A 1
Maximum Power Dissipation PD 370 W TC = 25°C 1
Linear Derating Factor 2.5 W/°C 1
Gate-to-Source Voltage VGS -16 16 V 1
Peak Diode Recovery dv/dt dv/dt 21 V/ns 1
Operating Junction Temperature Range TJ -55 175 °C 1
Storage Temperature Range TSTG -55 175 °C 1
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 1
Mounting Torque 10 lbin 6-32 or M3 screw; 1.1Nm 1
Single Pulse Avalanche Energy (thermally limited) EAS 305 mJ 1
Junction-to-Case Thermal Resistance RθJC 0.4 °C/W 1
Case-to-Sink Thermal Resistance, Flat, Greased Surface RθCS 0.5 °C/W Flat, Greased Surface 1
Junction-to-Ambient Thermal Resistance RθJA 62 °C/W When mounted on 1" square PCB (FR-4 or G-10 Material) 1
Drain-to-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 3.4 4.3 mΩ VGS = 10V, ID = 110A 2
Static Drain-to-Source On-Resistance RDS(on) 3.6 4.5 mΩ VGS = 4.5V, ID = 92A 2
Gate Threshold Voltage VGS(th) 1 2.5 V VDS = VGS, ID = 250µA 2
Drain-to-Source Leakage Current IDSS 20 µA VDS = 100V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 µA VDS = 100V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 16V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -16V 2
Forward Transconductance gfs 320 S VDS = 25V, ID = 110A 2
Total Gate Charge Qg 87 130 nC ID = 110A, VDS = 50V, VGS = 4.5V 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 110A, VGS = 0V 2
Continuous Source Current (Body Diode) IS 180 A 2
Pulsed Source Current (Body Diode) ISM 730 A 2

CAD (KiCad official)

  • Symbol: IRLB4030PBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irlb4030pbf-etched.step / irlb4030pbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irlb4030pbf.step / irlb4030pbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 318a125d9a518f5b, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF