component
IRLB3034
Public Made by Adomby adom
UMW MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
IRLB3034
UMW · MOSFETs · TO-220
IRLB3034 from UMW, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-to-source voltage VGS is rated at ±20 V. |
| 2 | D | passive | Drain terminal; the drain-to-source breakdown voltage V(BR)DSS is 40 V and the continuous drain current is 195 A at TC=25°C (package limited). |
| 3 | S | passive | Source terminal; the continuous body-diode source current IS is 343 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 40 | V | ID=250µA, VGS=0V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS=VGS, ID=250μA | 3 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 1.4 | 1.7 | mΩ | VGS=10V, ID=195A | 3 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 1.6 | 2 | mΩ | VGS=4.5V, ID=172A | 3 | |
| Drain-to-Source Leakage Current | IDSS | 20 | µA | VDS=40V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 250 | µA | VDS=40V, VGS=0V, TJ=125°C | 3 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V | 3 | ||
| Diode Forward Voltage | VSD | 1.3 | 1.7 | V | TJ=25°C, IS=195, VGS=0V | 4 | |
| Continuous Drain Current (Silicon Limited) | ID | 343 | A | VGS=10V (Silicon Limited), TC=25°C | 1 | ||
| Continuous Drain Current (Silicon Limited) | ID | 243 | A | VGS=10V (Silicon Limited), TC=100°C | 1 | ||
| Continuous Drain Current (Package Limited) | ID | 195 | A | VGS=10V (Package Limited), TC=25°C | 1 | ||
| Pulsed Drain Current | IDM | 1372 | A | 1 | |||
| Maximum Power Dissipation | PD | 375 | W | TC=25°C | 1 | ||
| Linear Derating Factor | 2.5 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Peak Diode Recovery | dv/dt | 4.6 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | 10 seconds (1.6mm from case) | 1 | |||
| Mounting Torque | 10 | lbin | 6-32 or M3 screw | 1 | |||
| Single Pulse Avalanche Energy | EAS | 255 | mJ | Starting TJ=25°C, L=0.013mH, RG=25Ω, IAS=195A, VGS=10V | 2 | ||
| Junction-to-Case | RθJC | 0.4 | °C/W | Rθ measured at TJ approximately 90°C | 2 | ||
| Junction-to-Ambient | RθJA | 62 | °C/W | 2 | |||
| Case-to-Sink, Flat Greased Surface | RθCS | 0.5 | °C/W | Flat, Greased Surface | 2 |
CAD (KiCad official)
- Symbol:
IRLB3034 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
irlb3034-etched.step/irlb3034-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irlb3034.step/irlb3034.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (13 pp, sha256
86e581b81a539f52, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRLB3034
**UMW** · MOSFETs · TO-220
IRLB3034 from UMW, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-to-source voltage VGS is rated at ±20 V. |
| 2 | D | passive | Drain terminal; the drain-to-source breakdown voltage V(BR)DSS is 40 V and the continuous drain current is 195 A at TC=25°C (package limited). |
| 3 | S | passive | Source terminal; the continuous body-diode source current IS is 343 A at TC=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 40 | | | V | ID=250µA, VGS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VDS=VGS, ID=250μA | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | 1.4 | 1.7 | mΩ | VGS=10V, ID=195A | 3 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | 1.6 | 2 | mΩ | VGS=4.5V, ID=172A | 3 |
| Drain-to-Source Leakage Current | IDSS | | | 20 | µA | VDS=40V, VGS=0V | 3 |
| Drain-to-Source Leakage Current | IDSS | | | 250 | µA | VDS=40V, VGS=0V, TJ=125°C | 3 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS=20V | 3 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS=-20V | 3 |
| Diode Forward Voltage | VSD | | 1.3 | 1.7 | V | TJ=25°C, IS=195, VGS=0V | 4 |
| Continuous Drain Current (Silicon Limited) | ID | | | 343 | A | VGS=10V (Silicon Limited), TC=25°C | 1 |
| Continuous Drain Current (Silicon Limited) | ID | | | 243 | A | VGS=10V (Silicon Limited), TC=100°C | 1 |
| Continuous Drain Current (Package Limited) | ID | | | 195 | A | VGS=10V (Package Limited), TC=25°C | 1 |
| Pulsed Drain Current | IDM | | | 1372 | A | | 1 |
| Maximum Power Dissipation | PD | | | 375 | W | TC=25°C | 1 |
| Linear Derating Factor | | | | 2.5 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Peak Diode Recovery | dv/dt | | | 4.6 | V/ns | | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 175 | °C | | 1 |
| Soldering Temperature | | | | 300 | °C | 10 seconds (1.6mm from case) | 1 |
| Mounting Torque | | | | 10 | lbin | 6-32 or M3 screw | 1 |
| Single Pulse Avalanche Energy | EAS | | | 255 | mJ | Starting TJ=25°C, L=0.013mH, RG=25Ω, IAS=195A, VGS=10V | 2 |
| Junction-to-Case | RθJC | | | 0.4 | °C/W | Rθ measured at TJ approximately 90°C | 2 |
| Junction-to-Ambient | RθJA | | | 62 | °C/W | | 2 |
| Case-to-Sink, Flat Greased Surface | RθCS | | 0.5 | | °C/W | Flat, Greased Surface | 2 |
## CAD (KiCad official)
- Symbol: `IRLB3034`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `irlb3034-etched.step` / `irlb3034-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irlb3034.step` / `irlb3034.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8763509965053009920) (13 pp, sha256 `86e581b81a539f52`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irlb3034-datasheet.pdf)