component
IRL6372TRPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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irl6372trpbf: specified limits as data (metadata.characteristics, 23 rows from the datasheet)
2 files changed
+314−1
README.md+30@@ -26,6 +26,36 @@ IRL6372TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-to-Source Voltage | VDS | | | 30 | V | | 1 |+| Gate-to-Source Voltage | VGS | -12 | | 12 | V | | 1 |+| Continuous Drain Current | ID | | | 8.1 | A | TA = 25°C, VGS @ 4.5V | 1 |+| Continuous Drain Current | ID | | | 6.5 | A | TA = 70°C, VGS @ 4.5V | 1 |+| Pulsed Drain Current | IDM | | | 65 | A | | 1 |+| Power Dissipation | PD | | | 2 | W | TA = 25°C | 1 |+| Power Dissipation | PD | | | 1.3 | W | TA = 70°C | 1 |+| Linear Derating Factor | | | | 0.02 | W/°C | | 1 |+| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Drain-to-Source Breakdown Voltage | BVDSS | 30 | | | V | VGS = 0V, ID = 250µA | 2 |+| Static Drain-to-Source On-Resistance | RDS(on) | | 14 | 17.9 | mΩ | VGS = 4.5V, ID = 8.1A | 2 |+| Static Drain-to-Source On-Resistance | RDS(on) | | 17 | 23 | mΩ | VGS = 2.5V, ID = 6.5A | 2 |+| Gate Threshold Voltage | VGS(th) | 0.5 | | 1.1 | V | VDS = VGS, ID = 10µA | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 1 | µA | VDS = 24V, VGS = 0V | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 150 | µA | VDS = 24V, VGS = 0V, TJ = 125°C | 2 |+| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 12V | 2 |+| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -12V | 2 |+| Forward Transconductance | gfs | 30 | | | S | VDS = 10V, ID = 6.5A | 2 |+| Diode Forward Voltage | VSD | | | 1.2 | V | TJ = 25°C, IS = 6.5A, VGS = 0V | 2 |+| Reverse Recovery Time | trr | | 13 | 20 | ns | TJ = 25°C, IF = 6.5A, VDD = 24V, di/dt = 100/µs | 2 |+| Reverse Recovery Charge | Qrr | | 5.3 | 8 | nC | TJ = 25°C, IF = 6.5A, VDD = 24V, di/dt = 100/µs | 2 |+| Junction-to-Drain Lead | RθJL | | | 20 | °C/W | | 2 |+| Junction-to-Ambient | RθJA | | | 62.5 | °C/W | | 2 |+ ## CAD (KiCad official) - Symbol: `IRL6372TRPBF`
page.json+284−1@@ -181,6 +181,289 @@ "Package": "SO-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "fe170c1c64ce7996",+ "rows": [+ {+ "name": "Drain-to-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8.1,+ "conditions": "TA = 25°C, VGS @ 4.5V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6.5,+ "conditions": "TA = 70°C, VGS @ 4.5V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 65,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "TA = 70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Linear Derating Factor",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "W/°C",+ "min": null,+ "typ": null,+ "max": 0.02,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = 250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-to-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 14,+ "max": 17.9,+ "conditions": "VGS = 4.5V, ID = 8.1A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-to-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 17,+ "max": 23,+ "conditions": "VGS = 2.5V, ID = 6.5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.5,+ "typ": null,+ "max": 1.1,+ "conditions": "VDS = VGS, ID = 10µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS = 24V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "VDS = 24V, VGS = 0V, TJ = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Forward Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 12V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Reverse Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VGS = -12V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VDS = 10V, ID = 6.5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "TJ = 25°C, IS = 6.5A, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 13,+ "max": 20,+ "conditions": "TJ = 25°C, IF = 6.5A, VDD = 24V, di/dt = 100/µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 5.3,+ "max": 8,+ "conditions": "TJ = 25°C, IF = 6.5A, VDD = 24V, di/dt = 100/µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Drain Lead",+ "symbol": "RθJL",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 62.5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -222,4 +505,4 @@ "visibility": { "public": true }-}+}