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Contents

README

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IRL6372TRPBF

Infineon Technologies · MOSFETs · SO-8

IRL6372TRPBF from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of MOSFET 2 (second channel of the dual N-channel HEXFET, VDS 30 V).
2 G2 input Gate of MOSFET 2, gate-to-source voltage limited to ±12 V.
3 S1 passive Source of MOSFET 1 (first channel of the dual N-channel HEXFET, VDS 30 V).
4 G1 input Gate of MOSFET 1, gate-to-source voltage limited to ±12 V.
5 D1 passive Drain of MOSFET 1, shorted with pin 6, continuous drain current 8.1 A at TA = 25°C.
6 D1 passive Drain of MOSFET 1, shorted with pin 5, continuous drain current 8.1 A at TA = 25°C.
7 D2 passive Drain of MOSFET 2, shorted with pin 8, continuous drain current 8.1 A at TA = 25°C.
8 D2 passive Drain of MOSFET 2, shorted with pin 7, continuous drain current 8.1 A at TA = 25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDS 30 V 1
Gate-to-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 8.1 A TA = 25°C, VGS @ 4.5V 1
Continuous Drain Current ID 6.5 A TA = 70°C, VGS @ 4.5V 1
Pulsed Drain Current IDM 65 A 1
Power Dissipation PD 2 W TA = 25°C 1
Power Dissipation PD 1.3 W TA = 70°C 1
Linear Derating Factor 0.02 W/°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Drain-to-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 14 17.9 mΩ VGS = 4.5V, ID = 8.1A 2
Static Drain-to-Source On-Resistance RDS(on) 17 23 mΩ VGS = 2.5V, ID = 6.5A 2
Gate Threshold Voltage VGS(th) 0.5 1.1 V VDS = VGS, ID = 10µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS = 24V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 150 µA VDS = 24V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 12V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -12V 2
Forward Transconductance gfs 30 S VDS = 10V, ID = 6.5A 2
Diode Forward Voltage VSD 1.2 V TJ = 25°C, IS = 6.5A, VGS = 0V 2
Reverse Recovery Time trr 13 20 ns TJ = 25°C, IF = 6.5A, VDD = 24V, di/dt = 100/µs 2
Reverse Recovery Charge Qrr 5.3 8 nC TJ = 25°C, IF = 6.5A, VDD = 24V, di/dt = 100/µs 2
Junction-to-Drain Lead RθJL 20 °C/W 2
Junction-to-Ambient RθJA 62.5 °C/W 2

CAD (KiCad official)

  • Symbol: IRL6372TRPBF
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: irl6372trpbf-etched.step / irl6372trpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irl6372trpbf.step / irl6372trpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 fe170c1c64ce7996, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF