component

IRL3803PBF-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorirl3803pbf-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
irl3803pbf-vb / README.md
History Download
Ray Publish 0.1.0 e009b5f 16d ago

IRL3803PBF-VB

VBsemi Elec · MOSFETs · TO-220AB

IRL3803PBF-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V and a threshold of 1.0 V to 3.0 V.
2 D passive Drain terminal, rated for 30 V drain-source voltage and 140 A continuous drain current at TC = 25 °C (package limit 90 A).
3 S passive Source terminal, with a continuous source-drain diode current of 90 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Single Pulse Avalanche Energy EAS 375 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 250 W TC = 25 °C 1
Maximum Power Dissipation PD 175 W TC = 70 °C 1
Maximum Power Dissipation PD 3.75 W TA = 25 °C b, c 1
Maximum Power Dissipation PD 2.63 W TA = 70 °C b, c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Maximum Junction-to-Ambient RthJA 32 40 °C/W t ≤ 10 sec, surface mounted on 1" x 1" FR4 board 1
Maximum Junction-to-Case RthJC 0.5 0.6 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS 30 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
On-State Drain Current ID(on) 90 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.002 Ω VGS = 10 V, ID = 38.8 A 2
Drain-Source On-State Resistance RDS(on) 0.0028 Ω VGS = 4.5 V, ID = 37 A 2
Total Gate Charge Qg 171 257 nC VDS = 15 V, VGS = 10 V, ID = 38.8 A 2
Total Gate Charge Qg 81.5 123 nC VDS = 15 V, VGS = 4.5 V, ID = 28.8 A 2
Gate Resistance Rg 1.4 2.1 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 18 27 ns VDD = 15 V, RL = 0.625 Ω, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 11 17 ns VDD = 15 V, RL = 0.625 Ω, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 70 105 ns VDD = 15 V, RL = 0.625 Ω, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 10 15 ns VDD = 15 V, RL = 0.625 Ω, VGEN = 10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 55 83 ns VDD = 15 V, RL = 0.67 Ω, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 180 270 ns VDD = 15 V, RL = 0.67 Ω, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 55 83 ns VDD = 15 V, RL = 0.67 Ω, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 12 18 ns VDD = 15 V, RL = 0.67 Ω, VGEN = 4.5 V, Rg = 1 Ω 2
Body Diode Voltage VSD 0.8 1.2 V IS = 22 A 2
Body Diode Reverse Recovery Time trr 52 78 ns IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 70.2 105 nC IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 2
VDS Temperature Coefficient ΔVDS/TJ 35 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -7.5 mV/°C ID = 250 µA 2
Forward Transconductance gfs 160 S VDS = 15 V, ID = 38.8 A 2
Input Capacitance Ciss 8400 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 1725 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 970 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 34 nC 2
Gate-Drain Charge Qgd 29 nC 2

CAD (KiCad official)

  • Symbol: IRL3803PBF-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irl3803pbf-vb-etched.step / irl3803pbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irl3803pbf-vb.step / irl3803pbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 6494da243f9ee689, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF