component
IRL3103PBF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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IRL3103PBF-VB
VBsemi Elec · MOSFETs · TO-220AB
IRL3103PBF-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 1.0 V min to 2.5 V max at ID = 250 µA. |
| 2 | D | passive | Drain (also connected to the mounting tab); VDS rated 30 V with continuous drain current of 70 A at TC = 25 °C and pulsed drain current of 250 A. |
| 3 | S | passive | Source; continuous source current (diode conduction) is 70 A, with RDS(on) of 0.007 Ω at VGS = 10 V and 0.010 Ω at VGS = 4.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 30 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS = 0 V, VDS = 30 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | μA | VGS = 0 V, VDS = 30 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 150 | μA | VGS = 0 V, VDS = 30 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 70 | A | VGS = 10 V, VDS ≥ 5 V | 2 | ||
| Input Capacitance | Ciss | 1500 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 260 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 95 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Total Gate Charge | Qg | 46 | 75 | nC | VGS = 10 V, VDS = 20 V, ID = 50 A | 2 | |
| Gate Resistance | Rg | 1.3 | 2.8 | 4.5 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 9 | 15 | ns | VDD = 20 V, RL = 0.4 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 19 | 30 | ns | VDD = 20 V, RL = 0.4 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 26 | 40 | ns | VDD = 20 V, RL = 0.4 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 10 | 15 | ns | VDD = 20 V, RL = 0.4 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Pulsed Source Current | ISM | 200 | A | 2 | |||
| Forward Voltage | VSD | 0.87 | 1.5 | V | IF = 30 A, VGS = 0 V | 2 | |
| Drain-Source Voltage | VDS | 30 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | 70 | A | TC = 25 °C, package limited | 1 | ||
| Continuous Drain Current | ID | 50 | A | TC = 125 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 70 | A | TC = 25 °C | 1 | ||
| Pulsed Drain Current | IDM | 250 | A | TC = 25 °C | 1 | ||
| Single Pulse Avalanche Current | IAS | 33 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 54 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 71 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 23 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 50 | °C/W | PCB mount, 1" square FR4 | 1 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.007 | Ω | VGS = 10 V, ID = 20 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.01 | Ω | VGS = 10 V, ID = 20 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.014 | Ω | VGS = 10 V, ID = 20 A, TJ = 175 °C | 2 | ||
| Forward Transconductance | gfs | 100 | S | VDS = 15 V, ID = 15 A | 2 | ||
| Gate-Source Charge | Qgs | 10 | nC | VGS = 10 V, VDS = 20 V, ID = 50 A | 2 | ||
| Gate-Drain Charge | Qgd | 8 | nC | VGS = 10 V, VDS = 20 V, ID = 50 A | 2 |
CAD (KiCad official)
- Symbol:
IRL3103PBF-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
irl3103pbf-vb-etched.step/irl3103pbf-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irl3103pbf-vb.step/irl3103pbf-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
404c9ba58e9893a6, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# IRL3103PBF-VB
**VBsemi Elec** · MOSFETs · TO-220AB
IRL3103PBF-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 1.0 V min to 2.5 V max at ID = 250 µA. |
| 2 | D | passive | Drain (also connected to the mounting tab); VDS rated 30 V with continuous drain current of 70 A at TC = 25 °C and pulsed drain current of 250 A. |
| 3 | S | passive | Source; continuous source current (diode conduction) is 70 A, with RDS(on) of 0.007 Ω at VGS = 10 V and 0.010 Ω at VGS = 4.5 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 30 | | | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VGS = 0 V, VDS = 30 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 50 | μA | VGS = 0 V, VDS = 30 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 150 | μA | VGS = 0 V, VDS = 30 V, TJ = 175 °C | 2 |
| On-State Drain Current | ID(on) | 70 | | | A | VGS = 10 V, VDS ≥ 5 V | 2 |
| Input Capacitance | Ciss | | | 1500 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | | 260 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | | 95 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Total Gate Charge | Qg | | 46 | 75 | nC | VGS = 10 V, VDS = 20 V, ID = 50 A | 2 |
| Gate Resistance | Rg | 1.3 | 2.8 | 4.5 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | | 9 | 15 | ns | VDD = 20 V, RL = 0.4 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 19 | 30 | ns | VDD = 20 V, RL = 0.4 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 26 | 40 | ns | VDD = 20 V, RL = 0.4 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 10 | 15 | ns | VDD = 20 V, RL = 0.4 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Pulsed Source Current | ISM | | | 200 | A | | 2 |
| Forward Voltage | VSD | | 0.87 | 1.5 | V | IF = 30 A, VGS = 0 V | 2 |
| Drain-Source Voltage | VDS | | | 30 | V | TC = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | 70 | A | TC = 25 °C, package limited | 1 |
| Continuous Drain Current | ID | | | 50 | A | TC = 125 °C | 1 |
| Continuous Source Current (Diode Conduction) | IS | | | 70 | A | TC = 25 °C | 1 |
| Pulsed Drain Current | IDM | | | 250 | A | TC = 25 °C | 1 |
| Single Pulse Avalanche Current | IAS | | | 33 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS | | | 54 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD | | | 71 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 23 | W | TC = 125 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA | | | 50 | °C/W | PCB mount, 1" square FR4 | 1 |
| Drain-Source On-State Resistance | RDS(on) | | 0.007 | | Ω | VGS = 10 V, ID = 20 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.01 | | Ω | VGS = 10 V, ID = 20 A, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.014 | | Ω | VGS = 10 V, ID = 20 A, TJ = 175 °C | 2 |
| Forward Transconductance | gfs | | 100 | | S | VDS = 15 V, ID = 15 A | 2 |
| Gate-Source Charge | Qgs | | 10 | | nC | VGS = 10 V, VDS = 20 V, ID = 50 A | 2 |
| Gate-Drain Charge | Qgd | | 8 | | nC | VGS = 10 V, VDS = 20 V, ID = 50 A | 2 |
## CAD (KiCad official)
- Symbol: `IRL3103PBF-VB`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irl3103pbf-vb-etched.step` / `irl3103pbf-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irl3103pbf-vb.step` / `irl3103pbf-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/irl3103pbf-vb-datasheet.pdf) (8 pp, sha256 `404c9ba58e9893a6`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/irl3103pbf-vb-datasheet.pdf)