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IRFZ44RPBF

Public Made by Adom

by adom

Vishay Intertech MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRFZ44RPBF

Vishay Intertech · MOSFETs · TO-220AB

IRFZ44RPBF from Vishay Intertech, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the gate-source voltage is rated ±20 V (absolute maximum).
2 D passive Drain terminal, rated 60 V drain-source and 50 A continuous drain current at TC = 25 °C; the datasheet identifies the junction-to-case thermal path as drain-referenced.
3 S passive Source terminal; the body diode continuous source-drain current IS is rated 50 A.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 50 A VGS at 10 V, TC = 25 °C 1
Continuous Drain Current ID 36 A VGS at 10 V, TC = 100 °C 1
Pulsed Drain Current IDM 200 A 1
Single Pulse Avalanche Energy EAS 100 mJ 1
Maximum Power Dissipation PD 150 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 4.5 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s, 1.6 mm from case 1
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Case-to-Sink, Flat, Greased Surface RthCS 0.5 °C/W Flat, Greased Surface 2
Maximum Junction-to-Case (Drain) RthJC 1 °C/W 2
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 20 2
Zero Gate Voltage Drain Current IDSS 25 μA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 250 μA VDS = 48 V, VGS = 0 V, TJ = 150 °C 2
Drain-Source On-State Resistance RDS(on) 0.028 Ω VGS = 10 V, ID = 31 A 2
Forward Transconductance gfs 15 S VDS = 25 V, ID = 31 A 2
Total Gate Charge Qg 67 nC VGS = 10 V, ID = 51 A, VDS = 48 V 2
Gate-Source Charge Qgs 18 nC VGS = 10 V, ID = 51 A, VDS = 48 V 2
Gate-Drain Charge Qgd 25 nC VGS = 10 V, ID = 51 A, VDS = 48 V 2
Continuous Source-Drain Diode Current IS 50 A MOSFET symbol showing the integral reverse p - n junction diode 2
Pulsed Diode Forward Current ISM 200 A 2
Body Diode Voltage VSD 2.5 V TJ = 25 °C, IS = 51 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 120 180 ns TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 0.53 0.8 μC 2

CAD (KiCad official)

  • Symbol: IRFZ44RPBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfz44rpbf-etched.step / irfz44rpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfz44rpbf.step / irfz44rpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 b9037246ce0818d3, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF