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IRFZ44RPBF-VB

VBsemi Elec · MOSFETs · TO-220AB

IRFZ44RPBF-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, rated for logic-level drive with RDS(on) of 0.024 Ω at VGS = 10 V and 0.028 Ω at VGS = 4.5 V, and a gate-source threshold of 1.0 V to 2.5 V.
2 D passive Drain terminal, rated for a drain-source voltage of 60 V and a continuous drain current of 50 A at TC = 25 °C, and also electrically connected to the tab (case).
3 S passive Source terminal, the reference for the gate drive, with a continuous body-diode source-drain current of 50 A and a pulsed diode forward current of 200 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Continuous Drain Current ID 50 A VGS at 10 V, TC = 25 °C 1
Continuous Drain Current 36 A TC = 100 °C 1
Pulsed Drain Current IDM 200 A 1
Single Pulse Avalanche Energy EAS 400 mJ 1
Maximum Power Dissipation PD 150 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 4.5 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s, 1.6 mm from case 1
Linear Derating Factor 1 W/°C 1
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Maximum Junction-to-Ambient (PCB Mount) RthJA 40 °C/W PCB mount, 1 in square FR-4 or G-10 2
Maximum Junction-to-Case (Drain) RthJC 1 °C/W 2
Drain-Source Breakdown Voltage VDS 60 V VGS = 0, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 1 2.5 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 10 V 2
Zero Gate Voltage Drain Current IDSS 25 μA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 250 μA VDS = 48 V, VGS = 0 V, TJ = 150 °C 2
Forward Transconductance gfs 23 S VDS = 25 V, ID = 21 A 2
Total Gate Charge Qg 66 nC VGS = 5.0 V, ID = 51 A, VDS = 48 V, see fig. 6 and 13b 2
Gate-Source Charge Qgs 12 nC 2
Gate-Drain Charge Qgd 43 nC 2
Continuous Source-Drain Diode Current IS 50 A MOSFET symbol showing the integral reverse p-n junction diode 2
Pulsed Diode Forward Current ISM 200 A 2
Body Diode Voltage VSD 2.5 V TJ = 25 °C, IS = 51 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 130 180 ns TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 0.84 1.3 μC 2

CAD (KiCad official)

  • Symbol: IRFZ44RPBF-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfz44rpbf-vb-etched.step / irfz44rpbf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfz44rpbf-vb.step / irfz44rpbf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 dcf5e80e30b22213, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF