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IRFZ44NS-HXY

Public Made by Adom

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HXY MOSFET MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

IRFZ44NS-HXY

HXY MOSFET · MOSFETs · TO-263

IRFZ44NS-HXY from HXY MOSFET, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet limits gate-source voltage to ±20 V (VGS), and the device is rated for operation with gate voltages as low as 4.5 V.
2 D passive Drain terminal; drain-source voltage is rated at 55 V (VDS) and continuous drain current at 49 A (35 A at TC = 100°C).
3 S passive Source terminal; continuous source current is rated at 49 A, with a pulsed source current of 160 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 55 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous ID 49 A 1
Drain Current-Continuous ID (100°C) 35 A TC=100°C 1
Pulsed Drain Current IDM 160 A 1
Maximum Power Dissipation PD 94 W 1
Repetitive Avalanche Energy EAR 9.4 mJ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 °C 1
Thermal Resistance, Junction-to-Case (Note 2) RθJC 1.5 °C/W 1
Drain-to-Source Breakdown Voltage V(BR)DSS 55 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 10 13 mΩ VGS = 10V, ID = 25A 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250µA 2
Forward Transconductance gfs 19 S VDS = 25V, ID = 25A 2
Drain-to-Source Leakage Current IDSS 25 µA VDS = 55V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 µA VDS = 44V, VGS = 0V, TJ = 150°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Total Gate Charge Qg 63 nC ID = 25A 2
Gate-to-Source Charge Qgs 14 nC VDS = 44V 2
Gate-to-Drain (Miller) Charge Qgd 23 nC VGS = 10V, See Fig. 6 and 13 2
Continuous Source Current (Body Diode) IS 49 A 2
Pulsed Source Current (Body Diode) ISM 160 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 25A, VGS = 0V 2
Reverse Recovery Time trr 63 95 ns TJ = 25°C, IF = 25A 2
Reverse Recovery Charge Qrr 170 260 nC di/dt = 100A/µs 2

CAD (KiCad official)

  • Symbol: IRFZ44NS-HXY
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: irfz44ns-hxy-etched.step / irfz44ns-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfz44ns-hxy.step / irfz44ns-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (9 pp, sha256 ba53b0bbaaa523cb, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF